Plasma etching treatment for surface modification of boron-doped diamond electrodes

Takeshi Kondo, Hiroyuki Ito, Kazuhide Kusakabe, Kazuhiro Ohkawa, Yasuaki Einaga, Akira Fujishima, Takeshi Kawai

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

Boron-doped diamond (BDD) thin film surfaces were modified by brief plasma treatment using various source gases such as Cl2, CF4, Ar and CH4, and the electrochemical properties of the surfaces were subsequently investigated. From X-ray photoelectron spectroscopy analysis, Cl and F atoms were detected on the BDD surfaces after 3 min of Cl2 and CF4 plasma treatments, respectively. From the results of cyclic voltammetry and electrochemical AC impedance measurements, the electron-transfer rate for Fe(CN)63-/4- and Fe2+/3+ at the BDD electrodes was found to decrease after Cl2 and CF4 plasma treatments. However, the electron-transfer rate for Ru(NH3)62+/3+ showed almost no change after these treatments. This may have been related to the specific interactions of surface halogen (C-Cl and C-F) moieties with the redox species because no electrical passivation was observed after the treatments. In addition, Raman spectroscopy showed that CH4 plasma treatment of diamond surfaces formed an insulating diamond-like carbon thin layer on the surfaces. Thus, by an appropriate choice of plasma source, short-duration plasma treatments can be an effective way to functionalize diamond surfaces in various ways while maintaining a wide potential window and a low background current.

Original languageEnglish
Pages (from-to)3841-3848
Number of pages8
JournalElectrochimica Acta
Volume52
Issue number11
DOIs
Publication statusPublished - 2007 Mar 1

Fingerprint

Diamond
Boron
Plasma etching
Surface treatment
Diamonds
Electrodes
Plasmas
Halogens
Plasma sources
Electrons
Diamond films
Electrochemical properties
Passivation
Cyclic voltammetry
Raman spectroscopy
Carbon
X ray photoelectron spectroscopy
Gases
Thin films
Atoms

Keywords

  • Boron-doped diamond (BDD) electrode
  • Electron-transfer kinetics
  • Plasma etching treatment
  • Surface modification
  • Surface termination

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Analytical Chemistry
  • Electrochemistry

Cite this

Plasma etching treatment for surface modification of boron-doped diamond electrodes. / Kondo, Takeshi; Ito, Hiroyuki; Kusakabe, Kazuhide; Ohkawa, Kazuhiro; Einaga, Yasuaki; Fujishima, Akira; Kawai, Takeshi.

In: Electrochimica Acta, Vol. 52, No. 11, 01.03.2007, p. 3841-3848.

Research output: Contribution to journalArticle

Kondo, T, Ito, H, Kusakabe, K, Ohkawa, K, Einaga, Y, Fujishima, A & Kawai, T 2007, 'Plasma etching treatment for surface modification of boron-doped diamond electrodes', Electrochimica Acta, vol. 52, no. 11, pp. 3841-3848. https://doi.org/10.1016/j.electacta.2006.11.001
Kondo, Takeshi ; Ito, Hiroyuki ; Kusakabe, Kazuhide ; Ohkawa, Kazuhiro ; Einaga, Yasuaki ; Fujishima, Akira ; Kawai, Takeshi. / Plasma etching treatment for surface modification of boron-doped diamond electrodes. In: Electrochimica Acta. 2007 ; Vol. 52, No. 11. pp. 3841-3848.
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