Point Defect Changes in CuGaSe2 Induced by Gas Annealing

Akimasa Yamada, Akihiko Nishio, Paul Fons, Hajime Shibata, Koji Matsubara, Shigeru Niki, Hisayuki Nakanishi

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Epitaxial CuGaSe2 films were grown on GaAs substrates under Cu-excess conditions to obtain stoichiometric compositions. The films were annealed in Ar, Sex or O2 ambients with or without a Cu or Cu-Se cap layer with the intention of changing the intrinsic defect concentrations. Samples were evaluated using low-temperature photoluminescence (PL) measurements. Annealing of the samples dramatically changed the PL spectra indicating that not only interdiffusion had occurred, but defect species and populations were changed. Comprehensive consideration of the changes led to the conclusion that the emissions at 1.62 eV, 1.66 eV and in the range from 1.2 to 1.4 eV are related to specific defects of Se vacancies, Cu vacancy-Se vacancy complexes and interstitial Cu, respectively.

Original languageEnglish
Pages (from-to)213-218
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume763
DOIs
Publication statusPublished - 2003
Externally publishedYes
EventMATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics - San Francisco, CA, United States
Duration: 2003 Apr 222003 Apr 25

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Yamada, A., Nishio, A., Fons, P., Shibata, H., Matsubara, K., Niki, S., & Nakanishi, H. (2003). Point Defect Changes in CuGaSe2 Induced by Gas Annealing. Materials Research Society Symposium - Proceedings, 763, 213-218. https://doi.org/10.1557/proc-763-b5.17