Polarization dependent optical control of atomic arrangement in multilayer Ge-Sb-Te phase change materials

Kotaro Makino; Junji Tominaga; Alexander V. Kolobov; Paul Fons; Muneaki Hase

doi:10.1063/1.4768785

Polarization dependent optical control of atomic arrangement in multilayer Ge-Sb-Te phase change materials

Kotaro Makino, Junji Tominaga, Alexander V. Kolobov, Paul Fons, Muneaki Hase

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We report the optical perturbation of atomic arrangement in the layered in GeTe/Sb₂Te₃ phase change memory material. To observe the structural change, the coherent A₁ mode of GeTe₄ local structure was investigated at various polarization angles of femtosecond pump pulses with the fluence at 78 μ J / cm². p-polarization found to be more effective in inducing the A₁ frequency shift that can be either reversible or irreversible depending on the pump fluence. The predominant origin of this shift is attributed to rearrangement of Ge atoms driven by anisotropic dissociation of the Ge-Te bonds along the [111] axis after the p-polarized pulse irradiation.

Original language	English
Article number	232101
Journal	Applied Physics Letters
Volume	101
Issue number	23
DOIs	https://doi.org/10.1063/1.4768785
Publication status	Published - 2012 Dec 3
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Polarization dependent optical control of atomic arrangement in multilayer Ge-Sb-Te phase change materials",

abstract = "We report the optical perturbation of atomic arrangement in the layered in GeTe/Sb2Te3 phase change memory material. To observe the structural change, the coherent A1 mode of GeTe4 local structure was investigated at various polarization angles of femtosecond pump pulses with the fluence at 78 μ J / cm2. p-polarization found to be more effective in inducing the A1 frequency shift that can be either reversible or irreversible depending on the pump fluence. The predominant origin of this shift is attributed to rearrangement of Ge atoms driven by anisotropic dissociation of the Ge-Te bonds along the [111] axis after the p-polarized pulse irradiation.",

author = "Kotaro Makino and Junji Tominaga and Kolobov, {Alexander V.} and Paul Fons and Muneaki Hase",

note = "Funding Information: This work was supported in part by KAKENHI-22340076 from MEXT, Japan. K.M. acknowledges JSPS research fellowship from JSPS, Japan.",

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AU - Makino, Kotaro

AU - Tominaga, Junji

AU - Kolobov, Alexander V.

AU - Fons, Paul

AU - Hase, Muneaki

N1 - Funding Information: This work was supported in part by KAKENHI-22340076 from MEXT, Japan. K.M. acknowledges JSPS research fellowship from JSPS, Japan.

PY - 2012/12/3

Y1 - 2012/12/3

N2 - We report the optical perturbation of atomic arrangement in the layered in GeTe/Sb2Te3 phase change memory material. To observe the structural change, the coherent A1 mode of GeTe4 local structure was investigated at various polarization angles of femtosecond pump pulses with the fluence at 78 μ J / cm2. p-polarization found to be more effective in inducing the A1 frequency shift that can be either reversible or irreversible depending on the pump fluence. The predominant origin of this shift is attributed to rearrangement of Ge atoms driven by anisotropic dissociation of the Ge-Te bonds along the [111] axis after the p-polarized pulse irradiation.

AB - We report the optical perturbation of atomic arrangement in the layered in GeTe/Sb2Te3 phase change memory material. To observe the structural change, the coherent A1 mode of GeTe4 local structure was investigated at various polarization angles of femtosecond pump pulses with the fluence at 78 μ J / cm2. p-polarization found to be more effective in inducing the A1 frequency shift that can be either reversible or irreversible depending on the pump fluence. The predominant origin of this shift is attributed to rearrangement of Ge atoms driven by anisotropic dissociation of the Ge-Te bonds along the [111] axis after the p-polarized pulse irradiation.

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Polarization dependent optical control of atomic arrangement in multilayer Ge-Sb-Te phase change materials

Abstract

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