Polarization of photoluminescence from partial dislocations in 4H-SiC

Rii Hirano, Hidekazu Tsuchida, Michio Tajima, Kohei M Itoh, Koji Maeda

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. The PLs from mobile PDs under optical excitation, which are 30°-Si(g) PDs, and PDs tilted by 6° from their Burgers vector (6°-PDs) were found to be polarized perpendicular to their dislocation lines. In contrast, the PL from immobile 30°-C(g) PDs was not polarized. The present results suggest that the carriers bound to the 30°-Si(g) and 6°-PDs have anisotropic wave functions and those bound to 30°-C(g) PDs have isotropic wave functions.

Original languageEnglish
Article number011301
JournalApplied Physics Express
Volume6
Issue number1
DOIs
Publication statusPublished - 2013 Jan

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Wave functions
Photoluminescence
Polarization
photoluminescence
Burgers vector
Photoexcitation
polarization
Luminescence
Imaging techniques
wave functions
Temperature
polarization characteristics
luminescence
room temperature

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Polarization of photoluminescence from partial dislocations in 4H-SiC. / Hirano, Rii; Tsuchida, Hidekazu; Tajima, Michio; Itoh, Kohei M; Maeda, Koji.

In: Applied Physics Express, Vol. 6, No. 1, 011301, 01.2013.

Research output: Contribution to journalArticle

Hirano, Rii ; Tsuchida, Hidekazu ; Tajima, Michio ; Itoh, Kohei M ; Maeda, Koji. / Polarization of photoluminescence from partial dislocations in 4H-SiC. In: Applied Physics Express. 2013 ; Vol. 6, No. 1.
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