Polarization of photoluminescence from partial dislocations in 4H-SiC

Rii Hirano, Hidekazu Tsuchida, Michio Tajima, Kohei M. Itoh, Koji Maeda

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Abstract

Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. The PLs from mobile PDs under optical excitation, which are 30°-Si(g) PDs, and PDs tilted by 6° from their Burgers vector (6°-PDs) were found to be polarized perpendicular to their dislocation lines. In contrast, the PL from immobile 30°-C(g) PDs was not polarized. The present results suggest that the carriers bound to the 30°-Si(g) and 6°-PDs have anisotropic wave functions and those bound to 30°-C(g) PDs have isotropic wave functions.

Original languageEnglish
Article number011301
JournalApplied Physics Express
Volume6
Issue number1
DOIs
Publication statusPublished - 2013 Jan 1

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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