Polarization Processes in Thin Layers of Amorphous MoS2 Obtained by RF Magnetron Sputtering

A. A. Kononov, R. A. Castro-Arata, D. D. Glavnaya, V. M. Stozharov, D. M. Dolginsev, Y. Saito, P. Fons, N. I. Anisimova, A. V. Kolobov

Research output: Contribution to journalArticle

Abstract

Abstract: The polarization processes in thin layers of amorphous molybdenum disulfide MoS2 are studied by dielectric spectroscopy techniques. The process of dipole-relaxation polarization is observed. The microscopic parameters of the system are calculated, and the relaxation time of the dipole-polarization process, as well as the activation energies Ea and Eσ of the relaxation process and conductivity, respectively, are determined. The fact that the two activation energies are close to each other suggests that the processes of relaxation and charge transport are driven by the same mechanism.

Original languageEnglish
Pages (from-to)558-562
Number of pages5
JournalSemiconductors
Volume54
Issue number5
DOIs
Publication statusPublished - 2020 May 1
Externally publishedYes

Keywords

  • molybdenum disulfide
  • transition-metal dichalcogenides
  • transport processes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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    Kononov, A. A., Castro-Arata, R. A., Glavnaya, D. D., Stozharov, V. M., Dolginsev, D. M., Saito, Y., Fons, P., Anisimova, N. I., & Kolobov, A. V. (2020). Polarization Processes in Thin Layers of Amorphous MoS2 Obtained by RF Magnetron Sputtering. Semiconductors, 54(5), 558-562. https://doi.org/10.1134/S1063782620050073