Polarized photoluminescence from partial dislocations in 4H-SiC

Rii Hirano, Michio Tajima, Hidekazu Tsuchida, Kohei M Itoh, Koji Maeda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. After expansion of Shockley stacking faults by high-power laser irradiation, PL from PDs tilted by 6° from their Burgers vector (6°-PDs) was observed with almost the same PL peak energy as that of 30°-Si(g) PDs. The PL from the 30°-Si(g) and 6°-PDs which were mobile under illumination were both found to be polarized perpendicular to their dislocation lines. In contrast, the PL from immobile 30°-C(g) PDs was not polarized. The present results suggest that the carriers bound to the 30°-Si(g) and 6°-PDs have anisotropic wave functions and those bound to 30°-C(g)PDs have isotropic wave functions.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Pages319-323
Number of pages5
Volume778-780
ISBN (Print)9783038350101
DOIs
Publication statusPublished - 2014
Event15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
Duration: 2013 Sep 292013 Oct 4

Publication series

NameMaterials Science Forum
Volume778-780
ISSN (Print)02555476

Other

Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
CountryJapan
CityMiyazaki
Period13/9/2913/10/4

Fingerprint

Photoluminescence
photoluminescence
Wave functions
Burgers vector
High power lasers
Stacking faults
Laser beam effects
Luminescence
wave functions
Lighting
Polarization
polarization characteristics
Imaging techniques
crystal defects
high power lasers
illumination
luminescence
irradiation
expansion
Temperature

Keywords

  • 4H-SiC
  • Dislocation
  • Photoluminescence
  • Polarization

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Hirano, R., Tajima, M., Tsuchida, H., Itoh, K. M., & Maeda, K. (2014). Polarized photoluminescence from partial dislocations in 4H-SiC. In Materials Science Forum (Vol. 778-780, pp. 319-323). (Materials Science Forum; Vol. 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.319

Polarized photoluminescence from partial dislocations in 4H-SiC. / Hirano, Rii; Tajima, Michio; Tsuchida, Hidekazu; Itoh, Kohei M; Maeda, Koji.

Materials Science Forum. Vol. 778-780 Trans Tech Publications Ltd, 2014. p. 319-323 (Materials Science Forum; Vol. 778-780).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hirano, R, Tajima, M, Tsuchida, H, Itoh, KM & Maeda, K 2014, Polarized photoluminescence from partial dislocations in 4H-SiC. in Materials Science Forum. vol. 778-780, Materials Science Forum, vol. 778-780, Trans Tech Publications Ltd, pp. 319-323, 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, Miyazaki, Japan, 13/9/29. https://doi.org/10.4028/www.scientific.net/MSF.778-780.319
Hirano R, Tajima M, Tsuchida H, Itoh KM, Maeda K. Polarized photoluminescence from partial dislocations in 4H-SiC. In Materials Science Forum. Vol. 778-780. Trans Tech Publications Ltd. 2014. p. 319-323. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.778-780.319
Hirano, Rii ; Tajima, Michio ; Tsuchida, Hidekazu ; Itoh, Kohei M ; Maeda, Koji. / Polarized photoluminescence from partial dislocations in 4H-SiC. Materials Science Forum. Vol. 778-780 Trans Tech Publications Ltd, 2014. pp. 319-323 (Materials Science Forum).
@inproceedings{b7e57fd5ec3944a0bc1daa256a63dd4b,
title = "Polarized photoluminescence from partial dislocations in 4H-SiC",
abstract = "Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. After expansion of Shockley stacking faults by high-power laser irradiation, PL from PDs tilted by 6° from their Burgers vector (6°-PDs) was observed with almost the same PL peak energy as that of 30°-Si(g) PDs. The PL from the 30°-Si(g) and 6°-PDs which were mobile under illumination were both found to be polarized perpendicular to their dislocation lines. In contrast, the PL from immobile 30°-C(g) PDs was not polarized. The present results suggest that the carriers bound to the 30°-Si(g) and 6°-PDs have anisotropic wave functions and those bound to 30°-C(g)PDs have isotropic wave functions.",
keywords = "4H-SiC, Dislocation, Photoluminescence, Polarization",
author = "Rii Hirano and Michio Tajima and Hidekazu Tsuchida and Itoh, {Kohei M} and Koji Maeda",
year = "2014",
doi = "10.4028/www.scientific.net/MSF.778-780.319",
language = "English",
isbn = "9783038350101",
volume = "778-780",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "319--323",
booktitle = "Materials Science Forum",

}

TY - GEN

T1 - Polarized photoluminescence from partial dislocations in 4H-SiC

AU - Hirano, Rii

AU - Tajima, Michio

AU - Tsuchida, Hidekazu

AU - Itoh, Kohei M

AU - Maeda, Koji

PY - 2014

Y1 - 2014

N2 - Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. After expansion of Shockley stacking faults by high-power laser irradiation, PL from PDs tilted by 6° from their Burgers vector (6°-PDs) was observed with almost the same PL peak energy as that of 30°-Si(g) PDs. The PL from the 30°-Si(g) and 6°-PDs which were mobile under illumination were both found to be polarized perpendicular to their dislocation lines. In contrast, the PL from immobile 30°-C(g) PDs was not polarized. The present results suggest that the carriers bound to the 30°-Si(g) and 6°-PDs have anisotropic wave functions and those bound to 30°-C(g)PDs have isotropic wave functions.

AB - Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. After expansion of Shockley stacking faults by high-power laser irradiation, PL from PDs tilted by 6° from their Burgers vector (6°-PDs) was observed with almost the same PL peak energy as that of 30°-Si(g) PDs. The PL from the 30°-Si(g) and 6°-PDs which were mobile under illumination were both found to be polarized perpendicular to their dislocation lines. In contrast, the PL from immobile 30°-C(g) PDs was not polarized. The present results suggest that the carriers bound to the 30°-Si(g) and 6°-PDs have anisotropic wave functions and those bound to 30°-C(g)PDs have isotropic wave functions.

KW - 4H-SiC

KW - Dislocation

KW - Photoluminescence

KW - Polarization

UR - http://www.scopus.com/inward/record.url?scp=84896069225&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896069225&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.778-780.319

DO - 10.4028/www.scientific.net/MSF.778-780.319

M3 - Conference contribution

AN - SCOPUS:84896069225

SN - 9783038350101

VL - 778-780

T3 - Materials Science Forum

SP - 319

EP - 323

BT - Materials Science Forum

PB - Trans Tech Publications Ltd

ER -