Polarized photoluminescence from partial dislocations in 4H-SiC

Rii Hirano, Michio Tajima, Hidekazu Tsuchida, Kohei M. Itoh, Koji Maeda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Polarization characteristics of luminescence from partial dislocations (PDs) in 4H-SiC have been investigated by room-temperature photoluminescence (PL) imaging. After expansion of Shockley stacking faults by high-power laser irradiation, PL from PDs tilted by 6° from their Burgers vector (6°-PDs) was observed with almost the same PL peak energy as that of 30°-Si(g) PDs. The PL from the 30°-Si(g) and 6°-PDs which were mobile under illumination were both found to be polarized perpendicular to their dislocation lines. In contrast, the PL from immobile 30°-C(g) PDs was not polarized. The present results suggest that the carriers bound to the 30°-Si(g) and 6°-PDs have anisotropic wave functions and those bound to 30°-C(g)PDs have isotropic wave functions.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2013
PublisherTrans Tech Publications Ltd
Pages319-323
Number of pages5
ISBN (Print)9783038350101
DOIs
Publication statusPublished - 2014 Jan 1
Event15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
Duration: 2013 Sep 292013 Oct 4

Publication series

NameMaterials Science Forum
Volume778-780
ISSN (Print)0255-5476

Other

Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
CountryJapan
CityMiyazaki
Period13/9/2913/10/4

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Keywords

  • 4H-SiC
  • Dislocation
  • Photoluminescence
  • Polarization

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Hirano, R., Tajima, M., Tsuchida, H., Itoh, K. M., & Maeda, K. (2014). Polarized photoluminescence from partial dislocations in 4H-SiC. In Silicon Carbide and Related Materials 2013 (pp. 319-323). (Materials Science Forum; Vol. 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.319