Possibility for rapid generation of high-pressure phases in single-crystal silicon by fast nanoindentation

Hu Huang, Jiwang Yan

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

High-pressure phases of silicon such as Si-XII/Si-III exhibit attractive optical, electrical and chemical properties, but until now, it has been technologically impossible to produce a significant quantity of Si-XII or Si-III. In this study, to explore the possibility of generating high-pressure silicon phases efficiently, comparative nanoindentation experiments were conducted. Effects of the loading rate, unloading rate and maximum indentation load were investigated, and key factors affecting the high-pressure phase formation were identified. A new nanoindentation protocol is proposed that introduces an intermediate holding stage into the unloading process. The resulting end phases under the indent were detected by a laser micro-Raman spectrometer and compared with those formed in conventional nanoindentation. The results indicate that high-pressure phases Si-XII and Si-III were successfully formed during the intermediate holding stage even with a very high loading/unloading rate. This finding demonstrates the possibility of rapid production of high-pressure phases of silicon through fast mechanical loading and unloading.

Original languageEnglish
Article number115001
JournalSemiconductor Science and Technology
Volume30
Issue number11
DOIs
Publication statusPublished - 2015 Sep 28

Fingerprint

Silicon
Nanoindentation
nanoindentation
unloading
Unloading
Single crystals
single crystals
silicon
loading rate
indentation
Indentation
chemical properties
Chemical properties
Spectrometers
Electric properties
Optical properties
electrical properties
spectrometers
optical properties
Lasers

Keywords

  • high-pressure phase
  • load control
  • nanoindentation
  • phase transformation
  • single-crystal silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Possibility for rapid generation of high-pressure phases in single-crystal silicon by fast nanoindentation. / Huang, Hu; Yan, Jiwang.

In: Semiconductor Science and Technology, Vol. 30, No. 11, 115001, 28.09.2015.

Research output: Contribution to journalArticle

@article{bf9e67c31dc64b72871859d538b027b6,
title = "Possibility for rapid generation of high-pressure phases in single-crystal silicon by fast nanoindentation",
abstract = "High-pressure phases of silicon such as Si-XII/Si-III exhibit attractive optical, electrical and chemical properties, but until now, it has been technologically impossible to produce a significant quantity of Si-XII or Si-III. In this study, to explore the possibility of generating high-pressure silicon phases efficiently, comparative nanoindentation experiments were conducted. Effects of the loading rate, unloading rate and maximum indentation load were investigated, and key factors affecting the high-pressure phase formation were identified. A new nanoindentation protocol is proposed that introduces an intermediate holding stage into the unloading process. The resulting end phases under the indent were detected by a laser micro-Raman spectrometer and compared with those formed in conventional nanoindentation. The results indicate that high-pressure phases Si-XII and Si-III were successfully formed during the intermediate holding stage even with a very high loading/unloading rate. This finding demonstrates the possibility of rapid production of high-pressure phases of silicon through fast mechanical loading and unloading.",
keywords = "high-pressure phase, load control, nanoindentation, phase transformation, single-crystal silicon",
author = "Hu Huang and Jiwang Yan",
year = "2015",
month = "9",
day = "28",
doi = "10.1088/0268-1242/30/11/115001",
language = "English",
volume = "30",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "11",

}

TY - JOUR

T1 - Possibility for rapid generation of high-pressure phases in single-crystal silicon by fast nanoindentation

AU - Huang, Hu

AU - Yan, Jiwang

PY - 2015/9/28

Y1 - 2015/9/28

N2 - High-pressure phases of silicon such as Si-XII/Si-III exhibit attractive optical, electrical and chemical properties, but until now, it has been technologically impossible to produce a significant quantity of Si-XII or Si-III. In this study, to explore the possibility of generating high-pressure silicon phases efficiently, comparative nanoindentation experiments were conducted. Effects of the loading rate, unloading rate and maximum indentation load were investigated, and key factors affecting the high-pressure phase formation were identified. A new nanoindentation protocol is proposed that introduces an intermediate holding stage into the unloading process. The resulting end phases under the indent were detected by a laser micro-Raman spectrometer and compared with those formed in conventional nanoindentation. The results indicate that high-pressure phases Si-XII and Si-III were successfully formed during the intermediate holding stage even with a very high loading/unloading rate. This finding demonstrates the possibility of rapid production of high-pressure phases of silicon through fast mechanical loading and unloading.

AB - High-pressure phases of silicon such as Si-XII/Si-III exhibit attractive optical, electrical and chemical properties, but until now, it has been technologically impossible to produce a significant quantity of Si-XII or Si-III. In this study, to explore the possibility of generating high-pressure silicon phases efficiently, comparative nanoindentation experiments were conducted. Effects of the loading rate, unloading rate and maximum indentation load were investigated, and key factors affecting the high-pressure phase formation were identified. A new nanoindentation protocol is proposed that introduces an intermediate holding stage into the unloading process. The resulting end phases under the indent were detected by a laser micro-Raman spectrometer and compared with those formed in conventional nanoindentation. The results indicate that high-pressure phases Si-XII and Si-III were successfully formed during the intermediate holding stage even with a very high loading/unloading rate. This finding demonstrates the possibility of rapid production of high-pressure phases of silicon through fast mechanical loading and unloading.

KW - high-pressure phase

KW - load control

KW - nanoindentation

KW - phase transformation

KW - single-crystal silicon

UR - http://www.scopus.com/inward/record.url?scp=84945948898&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84945948898&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/30/11/115001

DO - 10.1088/0268-1242/30/11/115001

M3 - Article

AN - SCOPUS:84945948898

VL - 30

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 11

M1 - 115001

ER -