Power scaling of femtosecond Ti: Sapphire laser double-side-pumped by high-power green InGaN diode lasers

Ryota Sawada, Hiroki Tanaka, Ryosuke Kariyama, Kenichi Hirosawa, Fumihiko Kannari

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We demonstrate a mode-locked Ti:sapphire laser pumped by high-power green InGaN diode lasers from both sides of the crystal and achieved a highest laser power of 50 mW.

    Original languageEnglish
    Title of host publicationCLEO: Science and Innovations, CLEO-SI 2015
    PublisherOptical Society of America (OSA)
    Pages2267
    Number of pages1
    ISBN (Print)9781557529688
    DOIs
    Publication statusPublished - 2015 May 4
    EventCLEO: Science and Innovations, CLEO-SI 2015 - San Jose, United States
    Duration: 2015 May 102015 May 15

    Other

    OtherCLEO: Science and Innovations, CLEO-SI 2015
    CountryUnited States
    CitySan Jose
    Period15/5/1015/5/15

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering
    • Atomic and Molecular Physics, and Optics

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  • Cite this

    Sawada, R., Tanaka, H., Kariyama, R., Hirosawa, K., & Kannari, F. (2015). Power scaling of femtosecond Ti: Sapphire laser double-side-pumped by high-power green InGaN diode lasers. In CLEO: Science and Innovations, CLEO-SI 2015 (pp. 2267). Optical Society of America (OSA). https://doi.org/10.1364/CLEO_AT.2015.JTh2A.102