Abstract
We demonstrate a mode-locked Ti:sapphire laser pumped by high-power green InGaN diode lasers from both sides of the crystal and achieved a highest laser power of 50 mW.
Original language | English |
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Title of host publication | Conference on Lasers and Electro-Optics Europe - Technical Digest |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Volume | 2015-August |
ISBN (Print) | 9781557529688 |
Publication status | Published - 2015 Aug 10 |
Event | Conference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States Duration: 2015 May 10 → 2015 May 15 |
Other
Other | Conference on Lasers and Electro-Optics, CLEO 2015 |
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Country/Territory | United States |
City | San Jose |
Period | 15/5/10 → 15/5/15 |
Keywords
- Absorption
- Cavity resonators
- Crystals
- Diode lasers
- Laser beams
- Laser excitation
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials