Power scaling of femtosecond Ti: Sapphire laser double-side-pumped by high-power green InGaN diode lasers

Ryota Sawada; Hiroki Tanaka; Ryosuke Kariyama; Kenichi Hirosawa; Fumihiko Kannari

Power scaling of femtosecond Ti: Sapphire laser double-side-pumped by high-power green InGaN diode lasers

Ryota Sawada, Hiroki Tanaka, Ryosuke Kariyama, Kenichi Hirosawa, Fumihiko Kannari

Department of Electronics and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate a mode-locked Ti:sapphire laser pumped by high-power green InGaN diode lasers from both sides of the crystal and achieved a highest laser power of 50 mW.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics Europe - Technical Digest
Publisher	Institute of Electrical and Electronics Engineers Inc.
Volume	2015-August
ISBN (Print)	9781557529688
Publication status	Published - 2015 Aug 10
Event	Conference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States Duration: 2015 May 10 → 2015 May 15

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2015
Country	United States
City	San Jose
Period	15/5/10 → 15/5/15

Keywords

Absorption
Cavity resonators
Crystals
Diode lasers
Laser beams
Laser excitation

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

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Power scaling of femtosecond Ti : Sapphire laser double-side-pumped by high-power green InGaN diode lasers. / Sawada, Ryota; Tanaka, Hiroki; Kariyama, Ryosuke; Hirosawa, Kenichi; Kannari, Fumihiko.

Conference on Lasers and Electro-Optics Europe - Technical Digest. Vol. 2015-August Institute of Electrical and Electronics Engineers Inc., 2015. 7183410.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sawada, R, Tanaka, H, Kariyama, R, Hirosawa, K & Kannari, F 2015, Power scaling of femtosecond Ti: Sapphire laser double-side-pumped by high-power green InGaN diode lasers. in Conference on Lasers and Electro-Optics Europe - Technical Digest. vol. 2015-August, 7183410, Institute of Electrical and Electronics Engineers Inc., Conference on Lasers and Electro-Optics, CLEO 2015, San Jose, United States, 15/5/10.

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abstract = "We demonstrate a mode-locked Ti:sapphire laser pumped by high-power green InGaN diode lasers from both sides of the crystal and achieved a highest laser power of 50 mW.",

keywords = "Absorption, Cavity resonators, Crystals, Diode lasers, Laser beams, Laser excitation",

author = "Ryota Sawada and Hiroki Tanaka and Ryosuke Kariyama and Kenichi Hirosawa and Fumihiko Kannari",

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AU - Kannari, Fumihiko

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KW - Cavity resonators

KW - Crystals

KW - Diode lasers

KW - Laser beams

KW - Laser excitation

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