Power scaling of femtosecond Ti: Sapphire laser double-side-pumped by high-power green InGaN diode lasers

Ryota Sawada, Hiroki Tanaka, Ryosuke Kariyama, Kenichi Hirosawa, Fumihiko Kannari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate a mode-locked Ti:sapphire laser pumped by high-power green InGaN diode lasers from both sides of the crystal and achieved a highest laser power of 50 mW.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics Europe - Technical Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2015-August
ISBN (Print)9781557529688
Publication statusPublished - 2015 Aug 10
EventConference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States
Duration: 2015 May 102015 May 15

Other

OtherConference on Lasers and Electro-Optics, CLEO 2015
CountryUnited States
CitySan Jose
Period15/5/1015/5/15

Keywords

  • Absorption
  • Cavity resonators
  • Crystals
  • Diode lasers
  • Laser beams
  • Laser excitation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

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    Sawada, R., Tanaka, H., Kariyama, R., Hirosawa, K., & Kannari, F. (2015). Power scaling of femtosecond Ti: Sapphire laser double-side-pumped by high-power green InGaN diode lasers. In Conference on Lasers and Electro-Optics Europe - Technical Digest (Vol. 2015-August). [7183410] Institute of Electrical and Electronics Engineers Inc..