Abstract
We demonstrate a mode-locked Ti:sapphire laser pumped by high-power green InGaN diode lasers from both sides of the crystal and achieved a highest laser power of 50 mW.
| Original language | English |
|---|---|
| Title of host publication | Conference on Lasers and Electro-Optics Europe - Technical Digest |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Volume | 2015-August |
| ISBN (Print) | 9781557529688 |
| Publication status | Published - 2015 Aug 10 |
| Event | Conference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States Duration: 2015 May 10 → 2015 May 15 |
Other
| Other | Conference on Lasers and Electro-Optics, CLEO 2015 |
|---|---|
| Country | United States |
| City | San Jose |
| Period | 15/5/10 → 15/5/15 |
Keywords
- Absorption
- Cavity resonators
- Crystals
- Diode lasers
- Laser beams
- Laser excitation
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Electronic, Optical and Magnetic Materials
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Cite this
Sawada, R., Tanaka, H., Kariyama, R., Hirosawa, K., & Kannari, F. (2015). Power scaling of femtosecond Ti: Sapphire laser double-side-pumped by high-power green InGaN diode lasers. In Conference on Lasers and Electro-Optics Europe - Technical Digest (Vol. 2015-August). [7183410] Institute of Electrical and Electronics Engineers Inc..