Power scaling of femtosecond Ti: Sapphire laser double-side-pumped by high-power green InGaN diode lasers

Ryota Sawada; Hiroki Tanaka; Ryosuke Kariyama; Kenichi Hirosawa; Fumihiko Kannari

Power scaling of femtosecond Ti: Sapphire laser double-side-pumped by high-power green InGaN diode lasers

Ryota Sawada, Hiroki Tanaka, Ryosuke Kariyama, Kenichi Hirosawa, Fumihiko Kannari

Department of Electronics and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate a mode-locked Ti:sapphire laser pumped by high-power green InGaN diode lasers from both sides of the crystal and achieved a highest laser power of 50 mW.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics Europe - Technical Digest
Publisher	Institute of Electrical and Electronics Engineers Inc.
Volume	2015-August
ISBN (Print)	9781557529688
Publication status	Published - 2015 Aug 10
Event	Conference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States Duration: 2015 May 10 → 2015 May 15

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2015
Country/Territory	United States
City	San Jose
Period	15/5/10 → 15/5/15

Keywords

Absorption
Cavity resonators
Crystals
Diode lasers
Laser beams
Laser excitation

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

Cite this

Power scaling of femtosecond Ti : Sapphire laser double-side-pumped by high-power green InGaN diode lasers. / Sawada, Ryota; Tanaka, Hiroki; Kariyama, Ryosuke et al.

Conference on Lasers and Electro-Optics Europe - Technical Digest. Vol. 2015-August Institute of Electrical and Electronics Engineers Inc., 2015. 7183410.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sawada, R, Tanaka, H, Kariyama, R, Hirosawa, K & Kannari, F 2015, Power scaling of femtosecond Ti: Sapphire laser double-side-pumped by high-power green InGaN diode lasers. in Conference on Lasers and Electro-Optics Europe - Technical Digest. vol. 2015-August, 7183410, Institute of Electrical and Electronics Engineers Inc., Conference on Lasers and Electro-Optics, CLEO 2015, San Jose, United States, 15/5/10.

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abstract = "We demonstrate a mode-locked Ti:sapphire laser pumped by high-power green InGaN diode lasers from both sides of the crystal and achieved a highest laser power of 50 mW.",

keywords = "Absorption, Cavity resonators, Crystals, Diode lasers, Laser beams, Laser excitation",

author = "Ryota Sawada and Hiroki Tanaka and Ryosuke Kariyama and Kenichi Hirosawa and Fumihiko Kannari",

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AU - Sawada, Ryota

AU - Tanaka, Hiroki

AU - Kariyama, Ryosuke

AU - Hirosawa, Kenichi

AU - Kannari, Fumihiko

PY - 2015/8/10

Y1 - 2015/8/10

N2 - We demonstrate a mode-locked Ti:sapphire laser pumped by high-power green InGaN diode lasers from both sides of the crystal and achieved a highest laser power of 50 mW.

AB - We demonstrate a mode-locked Ti:sapphire laser pumped by high-power green InGaN diode lasers from both sides of the crystal and achieved a highest laser power of 50 mW.

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KW - Cavity resonators

KW - Crystals

KW - Diode lasers

KW - Laser beams

KW - Laser excitation

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VL - 2015-August

BT - Conference on Lasers and Electro-Optics Europe - Technical Digest

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 10 May 2015 through 15 May 2015

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Power scaling of femtosecond Ti: Sapphire laser double-side-pumped by high-power green InGaN diode lasers

Abstract

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Keywords

ASJC Scopus subject areas

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