Prediction of a radial variation of plasma structure and ion distributions in the wafer interface in two-frequency capacitively coupled plasma

Takashi Yagisawa, Kazunobu Maeshige, Takashi Shimada, Toshiaki Makabe

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Two-frequency capacitively coupled plasmas (2f-CCP) are widely used as one of the powerful tools for SiO2 etching. We numerically performed the design of SiO2 etching by using VicAddress. Radial variation of plasma structure and ion distributions having a direct influence on etching were investigated in a 2f-CCP in CF4 (5%)/Ar, which consists both of a power source [very high frequency (VHF) 100 MHz] for high-density plasma production and a bias source (1 MHz) for the acceleration of ion toward the wafer. Degradation of the radial uniformity was observed near the wafer edge due to the distrotion of surface potential mainly caused by the nonuniformity of electron flux at a wafer. Furthermore, we proposed a way of reducing the charge build-up inside the micro trench with the aid of negative charge injection by using a pulsed operation of VHF power source, especially at the low pressure condition.

Original languageEnglish
Pages (from-to)90-100
Number of pages11
JournalIEEE Transactions on Plasma Science
Volume32
Issue number1 I
DOIs
Publication statusPublished - 2004 Feb

Fingerprint

ion distribution
very high frequencies
etching
wafers
predictions
electron flux
nonuniformity
plasma density
low pressure
injection
degradation
ions

Keywords

  • Ion-angular distribution (IAD)
  • Ion-energy distribution (IED)
  • Negative ion injection
  • Radial variation
  • SiO etching
  • Two-frequency capacitively coupled plasmas (2f-CCP)
  • VicAddress

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Condensed Matter Physics

Cite this

Prediction of a radial variation of plasma structure and ion distributions in the wafer interface in two-frequency capacitively coupled plasma. / Yagisawa, Takashi; Maeshige, Kazunobu; Shimada, Takashi; Makabe, Toshiaki.

In: IEEE Transactions on Plasma Science, Vol. 32, No. 1 I, 02.2004, p. 90-100.

Research output: Contribution to journalArticle

Yagisawa, Takashi ; Maeshige, Kazunobu ; Shimada, Takashi ; Makabe, Toshiaki. / Prediction of a radial variation of plasma structure and ion distributions in the wafer interface in two-frequency capacitively coupled plasma. In: IEEE Transactions on Plasma Science. 2004 ; Vol. 32, No. 1 I. pp. 90-100.
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