Prediction of organic low-k material etching in two frequency capacitively coupled plasma

K. Ishihara, T. Shimada, T. Yagisawa, T. Makabe

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Low-k materials are among the promising interlayer dielectric in terms of reducing the circuit transmission time. H2/N2 plasma is currently considered to be appropriate for organic low-k material etching, with both N and H radicals playing important roles on the feature profile of the etching. We have numerically estimated the influence of active species on the feature profile evolution of an organic low-k by changing the H 2/N2 mixture ratio by using a hybrid numerical model (extended-VicAddress), through the predictive image of the two frequency capacitively coupled plasma in H2/N2. We also discuss typical external plasma conditions producing a taper and bowing profiles. The predicted etch rate and feature profile reasonably reproduce the previous experimental results.

Original languageEnglish
Pages (from-to)B99-B104
JournalPlasma Physics and Controlled Fusion
Volume48
Issue number12 B
DOIs
Publication statusPublished - 2006 Dec 1

ASJC Scopus subject areas

  • Nuclear Energy and Engineering
  • Condensed Matter Physics

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