Prediction of plasma charging damage during SiO2 etching by VicAddress

T. Yagisawa, T. Ohmori, T. Shimada, T. Makabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have proposed a prototype of plasma processing CAD, i.e. Vertically Integrated Computer Aided Design for Device processing (VicAddress), that numerically predicts dry etching and related charging damage to a future profile and nanometer scale lower-level elements in ULSI, as well as the low temperature plasma structure. VicAddress has been applied to investigate the dry etching of SiO2 film, that requires ions with several hundred to a thousand of eV. Negative ion injection to a wafer was numerically predicted and designed in a pulsed two-frequency capacitively coupled plasma (2f-CCP) operated by a VHF (100 MHz) - LF (1 MHz) system. In this paper, we predict the velocity distribution incident on a wafer in a pulsed 2f-CCP by using a Monte Carlo method under the plasma structure given by RCT modeling. We discuss: functional separation of very high frequency sustaining and low frequency biasing sources; the negative charge injection mode to the SiO2 wafer during etching; and control of excess-dissociation of CFj by high energy secondary electrons.

Original languageEnglish
Title of host publication2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages97-99
Number of pages3
Volume2003-January
ISBN (Electronic)0780377478
DOIs
Publication statusPublished - 2003
Event2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003 - Corbeil-Essonnes, France
Duration: 2003 Apr 242003 Apr 25

Other

Other2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003
CountryFrance
CityCorbeil-Essonnes
Period03/4/2403/4/25

Fingerprint

computer aided design
charging
Etching
Computer aided design
Dry etching
etching
wafers
damage
Plasmas
Processing
predictions
ion injection
Plasma applications
Charge injection
very high frequencies
sustaining
cold plasmas
Velocity distribution
negative ions
Monte Carlo method

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Yagisawa, T., Ohmori, T., Shimada, T., & Makabe, T. (2003). Prediction of plasma charging damage during SiO2 etching by VicAddress. In 2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003 (Vol. 2003-January, pp. 97-99). [1200930] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PPID.2003.1200930

Prediction of plasma charging damage during SiO2 etching by VicAddress. / Yagisawa, T.; Ohmori, T.; Shimada, T.; Makabe, T.

2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 97-99 1200930.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yagisawa, T, Ohmori, T, Shimada, T & Makabe, T 2003, Prediction of plasma charging damage during SiO2 etching by VicAddress. in 2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003. vol. 2003-January, 1200930, Institute of Electrical and Electronics Engineers Inc., pp. 97-99, 2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003, Corbeil-Essonnes, France, 03/4/24. https://doi.org/10.1109/PPID.2003.1200930
Yagisawa T, Ohmori T, Shimada T, Makabe T. Prediction of plasma charging damage during SiO2 etching by VicAddress. In 2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003. Vol. 2003-January. Institute of Electrical and Electronics Engineers Inc. 2003. p. 97-99. 1200930 https://doi.org/10.1109/PPID.2003.1200930
Yagisawa, T. ; Ohmori, T. ; Shimada, T. ; Makabe, T. / Prediction of plasma charging damage during SiO2 etching by VicAddress. 2003 8th International Symposium on Plasma- and Process-Induced Damage, P2ID 2003. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. pp. 97-99
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