Preparation and Characterization of cu(Al, ga)(s, se)2 Penternary Alloys

Akihiro Ogawa, Ryo Sudo, Akhlesh Gupta, Sho Shirakata, Shigefusa Chichibu, Satoru Matsumoto, Shigehiro Isomura

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Abstract

Photoreflectance (PR) and Photoluminescence (PL) measurements have been performed at 77 K on single crystals of CuAlxGa1_JC(So.5Se0.5)2 penternary alloys grown by the iodine chemical vapor transport method. The energies of excitonsassociated with uppermost valence bands have been obtained as a function of composition, and an approximately quadratic dependence has been found. Near-band-edge PL has been observed in the crystal with x^ 0.77, and the PL has beendiscussed in terms of the free exciton.

Original languageEnglish
Pages (from-to)588-589
Number of pages2
JournalJapanese journal of applied physics
Volume32
Issue numberS3
DOIs
Publication statusPublished - 1993 Jan

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Keywords

  • Chalcopyrite semiconductor
  • CuAlxGa1_x(So.5Seo.5)2/photoreflectance
  • Photoluminescence

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Ogawa, A., Sudo, R., Gupta, A., Shirakata, S., Chichibu, S., Matsumoto, S., & Isomura, S. (1993). Preparation and Characterization of cu(Al, ga)(s, se)2 Penternary Alloys. Japanese journal of applied physics, 32(S3), 588-589. https://doi.org/10.7567/JJAPS.32S3.588