TY - JOUR
T1 - Preparation and Characterization of cu(Al, ga)(s, se)2 Penternary Alloys
AU - Ogawa, Akihiro
AU - Sudo, Ryo
AU - Gupta, Akhlesh
AU - Shirakata, Sho
AU - Chichibu, Shigefusa
AU - Matsumoto, Satoru
AU - Isomura, Shigehiro
PY - 1993/1
Y1 - 1993/1
N2 - Photoreflectance (PR) and Photoluminescence (PL) measurements have been performed at 77 K on single crystals of CuAlxGa1_JC(So.5Se0.5)2 penternary alloys grown by the iodine chemical vapor transport method. The energies of excitonsassociated with uppermost valence bands have been obtained as a function of composition, and an approximately quadratic dependence has been found. Near-band-edge PL has been observed in the crystal with x^ 0.77, and the PL has beendiscussed in terms of the free exciton.
AB - Photoreflectance (PR) and Photoluminescence (PL) measurements have been performed at 77 K on single crystals of CuAlxGa1_JC(So.5Se0.5)2 penternary alloys grown by the iodine chemical vapor transport method. The energies of excitonsassociated with uppermost valence bands have been obtained as a function of composition, and an approximately quadratic dependence has been found. Near-band-edge PL has been observed in the crystal with x^ 0.77, and the PL has beendiscussed in terms of the free exciton.
KW - Chalcopyrite semiconductor
KW - CuAlxGa1_x(So.5Seo.5)2/photoreflectance
KW - Photoluminescence
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U2 - 10.7567/JJAPS.32S3.588
DO - 10.7567/JJAPS.32S3.588
M3 - Article
AN - SCOPUS:3943052100
SN - 0021-4922
VL - 32
SP - 588
EP - 589
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - S3
ER -