Preparation of a novel fluorosilicate salt for electrodeposition of silicon at low temperature

Y. Katayama; M. Yokomizo; T. Miura; T. Kishi

doi:10.5796/electrochemistry.69.834

Preparation of a novel fluorosilicate salt for electrodeposition of silicon at low temperature

Y. Katayama, M. Yokomizo, T. Miura, T. Kishi

Department of Applied Chemistry

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

A novel fluorosilicate salt, 1-ethyl-3-methylimidazolium hexafluorosilicate ((EMI)₂SiF₆), was prepared by the reaction of EMICI and hexafluorosilicate acid aqueous solution. A transparent thin film containing silicon was deposited on a silver electrode by potentiostatic electrolysis in molten (EMI)₂SiF₆ at 90°C. The film was reactive against water to form silicon dioxide. (EMI)₂SiF₆ was found to dissolve in 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfone)imide (EMITFSI) room temperature molten salt. The same thin film was also obtained on a silver electrode by potentiostatic electrolysis in EMITFSI containing (EMI)₂SiF₆ at room temperature.

Original language	English
Pages (from-to)	834-836
Number of pages	3
Journal	Electrochemistry
Volume	69
Issue number	11
DOIs	https://doi.org/10.5796/electrochemistry.69.834
Publication status	Published - 2001 Nov

Keywords

1-ethyl-3-methylimidazolium Bis (trifluoromethanesulfone)imide
1-ethyl-3-methylimidazolium Hexafluorosilicate
Electrodeposition
Silicon

ASJC Scopus subject areas

Electrochemistry

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10.5796/electrochemistry.69.834

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title = "Preparation of a novel fluorosilicate salt for electrodeposition of silicon at low temperature",

abstract = "A novel fluorosilicate salt, 1-ethyl-3-methylimidazolium hexafluorosilicate ((EMI)2SiF6), was prepared by the reaction of EMICI and hexafluorosilicate acid aqueous solution. A transparent thin film containing silicon was deposited on a silver electrode by potentiostatic electrolysis in molten (EMI)2SiF6 at 90°C. The film was reactive against water to form silicon dioxide. (EMI)2SiF6 was found to dissolve in 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfone)imide (EMITFSI) room temperature molten salt. The same thin film was also obtained on a silver electrode by potentiostatic electrolysis in EMITFSI containing (EMI)2SiF6 at room temperature.",

keywords = "1-ethyl-3-methylimidazolium Bis (trifluoromethanesulfone)imide, 1-ethyl-3-methylimidazolium Hexafluorosilicate, Electrodeposition, Silicon",

author = "Y. Katayama and M. Yokomizo and T. Miura and T. Kishi",

year = "2001",

month = nov,

doi = "10.5796/electrochemistry.69.834",

language = "English",

volume = "69",

pages = "834--836",

journal = "Electrochemistry",

issn = "1344-3542",

publisher = "Electrochemical Society of Japan",

number = "11",

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TY - JOUR

T1 - Preparation of a novel fluorosilicate salt for electrodeposition of silicon at low temperature

AU - Katayama, Y.

AU - Yokomizo, M.

AU - Miura, T.

AU - Kishi, T.

PY - 2001/11

Y1 - 2001/11

N2 - A novel fluorosilicate salt, 1-ethyl-3-methylimidazolium hexafluorosilicate ((EMI)2SiF6), was prepared by the reaction of EMICI and hexafluorosilicate acid aqueous solution. A transparent thin film containing silicon was deposited on a silver electrode by potentiostatic electrolysis in molten (EMI)2SiF6 at 90°C. The film was reactive against water to form silicon dioxide. (EMI)2SiF6 was found to dissolve in 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfone)imide (EMITFSI) room temperature molten salt. The same thin film was also obtained on a silver electrode by potentiostatic electrolysis in EMITFSI containing (EMI)2SiF6 at room temperature.

AB - A novel fluorosilicate salt, 1-ethyl-3-methylimidazolium hexafluorosilicate ((EMI)2SiF6), was prepared by the reaction of EMICI and hexafluorosilicate acid aqueous solution. A transparent thin film containing silicon was deposited on a silver electrode by potentiostatic electrolysis in molten (EMI)2SiF6 at 90°C. The film was reactive against water to form silicon dioxide. (EMI)2SiF6 was found to dissolve in 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfone)imide (EMITFSI) room temperature molten salt. The same thin film was also obtained on a silver electrode by potentiostatic electrolysis in EMITFSI containing (EMI)2SiF6 at room temperature.

KW - 1-ethyl-3-methylimidazolium Bis (trifluoromethanesulfone)imide

KW - 1-ethyl-3-methylimidazolium Hexafluorosilicate

KW - Electrodeposition

KW - Silicon

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U2 - 10.5796/electrochemistry.69.834

DO - 10.5796/electrochemistry.69.834

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SN - 1344-3542

VL - 69

SP - 834

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JO - Electrochemistry

JF - Electrochemistry

IS - 11

ER -

Preparation of a novel fluorosilicate salt for electrodeposition of silicon at low temperature

Abstract

Keywords

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