Abstract
Conducting Al-doped ZnO and insulating Li-doped ZnO thin films were prepared by the sol-gel method. All the films exhibited c-axis-orientation perpendicular to substrates. The crystallite size of ZnO monotonically decreased with increasing the dopant concentration. Doping 1mol% of Al in the ZnO film minimized the sheet resistance on the order of 0.5 MΩ□-1. The conducting behavior of the Li-doped ZnO film was found to depend greatly on the heat-treatment temperature. The current density of 3×10-6 and 1×10-3 Acm-2 at an applied voltage of 5 V was observed for the 10mol% Li-doped ZnO films heat-treated at 500 and 600°C, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 109-112 |
| Number of pages | 4 |
| Journal | Key Engineering Materials |
| Issue number | 181-182 |
| Publication status | Published - 2000 Jan 1 |
Keywords
- Al Doping
- I-V Characteristic
- Li Doping
- Sol-Gel
- Thin Film
- ZnO
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering