Preparation of Al- and Li-doped ZnO thin films by sol-gel method

Shinobu Fujihara, Chikako Sasaki, Toshio Kimura

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Conducting Al-doped ZnO and insulating Li-doped ZnO thin films were prepared by the sol-gel method. All the films exhibited c-axis-orientation perpendicular to substrates. The crystallite size of ZnO monotonically decreased with increasing the dopant concentration. Doping 1mol% of Al in the ZnO film minimized the sheet resistance on the order of 0.5 MΩ□-1. The conducting behavior of the Li-doped ZnO film was found to depend greatly on the heat-treatment temperature. The current density of 3×10-6 and 1×10-3 Acm-2 at an applied voltage of 5 V was observed for the 10mol% Li-doped ZnO films heat-treated at 500 and 600°C, respectively.

Original languageEnglish
Pages (from-to)109-112
Number of pages4
JournalKey Engineering Materials
Issue number181-182
Publication statusPublished - 2000

Fingerprint

Sol-gel process
Thin films
Doping (additives)
Sheet resistance
Crystallite size
Current density
Heat treatment
Electric potential
Substrates
Temperature

Keywords

  • Al Doping
  • I-V Characteristic
  • Li Doping
  • Sol-Gel
  • Thin Film
  • ZnO

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemical Engineering (miscellaneous)

Cite this

Preparation of Al- and Li-doped ZnO thin films by sol-gel method. / Fujihara, Shinobu; Sasaki, Chikako; Kimura, Toshio.

In: Key Engineering Materials, No. 181-182, 2000, p. 109-112.

Research output: Contribution to journalArticle

Fujihara, Shinobu ; Sasaki, Chikako ; Kimura, Toshio. / Preparation of Al- and Li-doped ZnO thin films by sol-gel method. In: Key Engineering Materials. 2000 ; No. 181-182. pp. 109-112.
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