Preparation of the atomically straight step-edge Si (111) substrates as templates for nanostructure formation

Shunji Yoshida, Takeharu Sekiguchi, Kohei M Itoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report on the experimental discovery that the distribution of kinks along steps on vicinal Si(111) surfaces depends on the direction of the dc current passed along the steps for resistive annealing. The as-cleaned Si(111) surface miscut ∼1° towards [1̄1̄2] has a small (<3°) unavoidable azimuthal deviation, which produces a number of kinks along the step-edges. When the azimuthal misorientation is from [1̄1̄2] towards [1̄10] ([11̄0]), dc current flowing in the direction [1̄10] ([11̄0]) climbing up the kinks straightens the step-edges as opposed to the current flowing in the opposite [11̄0] ([1̄10]) direction. During annealing around 800°C, the dc current in the direction climbing up the kinks straightens the steps. The up-climbing current direction transports and concentrates the kinks in a region outside the template area, leaving a kink-free atomic step-edge region as an ideal template for a variety of nanostructure formations. The straight step edges produced in this manner have uniform atomic configuration known as U(2, 0).

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsL. Tsybeskov, D.J. Lockwood, C. Delerue, M. Ichikawa
Pages231-236
Number of pages6
Volume832
Publication statusPublished - 2005
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: 2004 Nov 292004 Dec 2

Other

Other2004 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period04/11/2904/12/2

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Nanostructures
Annealing
Substrates
Direction compound

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Yoshida, S., Sekiguchi, T., & Itoh, K. M. (2005). Preparation of the atomically straight step-edge Si (111) substrates as templates for nanostructure formation. In L. Tsybeskov, D. J. Lockwood, C. Delerue, & M. Ichikawa (Eds.), Materials Research Society Symposium Proceedings (Vol. 832, pp. 231-236). [F10.17]

Preparation of the atomically straight step-edge Si (111) substrates as templates for nanostructure formation. / Yoshida, Shunji; Sekiguchi, Takeharu; Itoh, Kohei M.

Materials Research Society Symposium Proceedings. ed. / L. Tsybeskov; D.J. Lockwood; C. Delerue; M. Ichikawa. Vol. 832 2005. p. 231-236 F10.17.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yoshida, S, Sekiguchi, T & Itoh, KM 2005, Preparation of the atomically straight step-edge Si (111) substrates as templates for nanostructure formation. in L Tsybeskov, DJ Lockwood, C Delerue & M Ichikawa (eds), Materials Research Society Symposium Proceedings. vol. 832, F10.17, pp. 231-236, 2004 MRS Fall Meeting, Boston, MA, United States, 04/11/29.
Yoshida S, Sekiguchi T, Itoh KM. Preparation of the atomically straight step-edge Si (111) substrates as templates for nanostructure formation. In Tsybeskov L, Lockwood DJ, Delerue C, Ichikawa M, editors, Materials Research Society Symposium Proceedings. Vol. 832. 2005. p. 231-236. F10.17
Yoshida, Shunji ; Sekiguchi, Takeharu ; Itoh, Kohei M. / Preparation of the atomically straight step-edge Si (111) substrates as templates for nanostructure formation. Materials Research Society Symposium Proceedings. editor / L. Tsybeskov ; D.J. Lockwood ; C. Delerue ; M. Ichikawa. Vol. 832 2005. pp. 231-236
@inproceedings{d71e5499026c4af4a2d7a2f3a7a3ee00,
title = "Preparation of the atomically straight step-edge Si (111) substrates as templates for nanostructure formation",
abstract = "We report on the experimental discovery that the distribution of kinks along steps on vicinal Si(111) surfaces depends on the direction of the dc current passed along the steps for resistive annealing. The as-cleaned Si(111) surface miscut ∼1° towards [1̄1̄2] has a small (<3°) unavoidable azimuthal deviation, which produces a number of kinks along the step-edges. When the azimuthal misorientation is from [1̄1̄2] towards [1̄10] ([11̄0]), dc current flowing in the direction [1̄10] ([11̄0]) climbing up the kinks straightens the step-edges as opposed to the current flowing in the opposite [11̄0] ([1̄10]) direction. During annealing around 800°C, the dc current in the direction climbing up the kinks straightens the steps. The up-climbing current direction transports and concentrates the kinks in a region outside the template area, leaving a kink-free atomic step-edge region as an ideal template for a variety of nanostructure formations. The straight step edges produced in this manner have uniform atomic configuration known as U(2, 0).",
author = "Shunji Yoshida and Takeharu Sekiguchi and Itoh, {Kohei M}",
year = "2005",
language = "English",
volume = "832",
pages = "231--236",
editor = "L. Tsybeskov and D.J. Lockwood and C. Delerue and M. Ichikawa",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - Preparation of the atomically straight step-edge Si (111) substrates as templates for nanostructure formation

AU - Yoshida, Shunji

AU - Sekiguchi, Takeharu

AU - Itoh, Kohei M

PY - 2005

Y1 - 2005

N2 - We report on the experimental discovery that the distribution of kinks along steps on vicinal Si(111) surfaces depends on the direction of the dc current passed along the steps for resistive annealing. The as-cleaned Si(111) surface miscut ∼1° towards [1̄1̄2] has a small (<3°) unavoidable azimuthal deviation, which produces a number of kinks along the step-edges. When the azimuthal misorientation is from [1̄1̄2] towards [1̄10] ([11̄0]), dc current flowing in the direction [1̄10] ([11̄0]) climbing up the kinks straightens the step-edges as opposed to the current flowing in the opposite [11̄0] ([1̄10]) direction. During annealing around 800°C, the dc current in the direction climbing up the kinks straightens the steps. The up-climbing current direction transports and concentrates the kinks in a region outside the template area, leaving a kink-free atomic step-edge region as an ideal template for a variety of nanostructure formations. The straight step edges produced in this manner have uniform atomic configuration known as U(2, 0).

AB - We report on the experimental discovery that the distribution of kinks along steps on vicinal Si(111) surfaces depends on the direction of the dc current passed along the steps for resistive annealing. The as-cleaned Si(111) surface miscut ∼1° towards [1̄1̄2] has a small (<3°) unavoidable azimuthal deviation, which produces a number of kinks along the step-edges. When the azimuthal misorientation is from [1̄1̄2] towards [1̄10] ([11̄0]), dc current flowing in the direction [1̄10] ([11̄0]) climbing up the kinks straightens the step-edges as opposed to the current flowing in the opposite [11̄0] ([1̄10]) direction. During annealing around 800°C, the dc current in the direction climbing up the kinks straightens the steps. The up-climbing current direction transports and concentrates the kinks in a region outside the template area, leaving a kink-free atomic step-edge region as an ideal template for a variety of nanostructure formations. The straight step edges produced in this manner have uniform atomic configuration known as U(2, 0).

UR - http://www.scopus.com/inward/record.url?scp=23844468450&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=23844468450&partnerID=8YFLogxK

M3 - Conference contribution

VL - 832

SP - 231

EP - 236

BT - Materials Research Society Symposium Proceedings

A2 - Tsybeskov, L.

A2 - Lockwood, D.J.

A2 - Delerue, C.

A2 - Ichikawa, M.

ER -