Present status and future prospects of nano-carbon interconnect technologies for LSIs

Yuji Awano

doi:10.1109/IEDM.2015.7409705

Present status and future prospects of nano-carbon interconnect technologies for LSIs

Yuji Awano

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on the present status and future prospect of nano-carbon interconnect technologies, consisting of carbon nanotube (CNT) vertical interconnects (vias) and graphene horizontal interconnects, mainly in terms of material growth and fabrication process technologies to meet the requirement of process compatibility with a conventional Si LSI. Their superior electrical properties for replacing Cu interconnects are demonstrated.

Original language	English
Title of host publication	Technical Digest - International Electron Devices Meeting, IEDM
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	15.5.1-15.5.4
Volume	2016-February
ISBN (Print)	9781467398930
DOIs	https://doi.org/10.1109/IEDM.2015.7409705
Publication status	Published - 2016 Feb 16
Event	61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States Duration: 2015 Dec 7 → 2015 Dec 9

Other

Other	61st IEEE International Electron Devices Meeting, IEDM 2015
Country/Territory	United States
City	Washington
Period	15/12/7 → 15/12/9

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Materials Chemistry

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10.1109/IEDM.2015.7409705

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Awano, Y 2016, Present status and future prospects of nano-carbon interconnect technologies for LSIs. in Technical Digest - International Electron Devices Meeting, IEDM. vol. 2016-February, 7409705, Institute of Electrical and Electronics Engineers Inc., pp. 15.5.1-15.5.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 15/12/7. https://doi.org/10.1109/IEDM.2015.7409705

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AB - We report on the present status and future prospect of nano-carbon interconnect technologies, consisting of carbon nanotube (CNT) vertical interconnects (vias) and graphene horizontal interconnects, mainly in terms of material growth and fabrication process technologies to meet the requirement of process compatibility with a conventional Si LSI. Their superior electrical properties for replacing Cu interconnects are demonstrated.

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ER -

Present status and future prospects of nano-carbon interconnect technologies for LSIs

Abstract

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ASJC Scopus subject areas

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