Principles of Operation of Short-Channel Gallium Arsenide Field-Effect Transistor Determined by Monte Carlo Method

Yuji Awano; Kazutaka Tomizawa; Nobuo Hashizume

doi:10.1109/T-ED.1984.21549

Principles of Operation of Short-Channel Gallium Arsenide Field-Effect Transistor Determined by Monte Carlo Method

Yuji Awano, Kazutaka Tomizawa, Nobuo Hashizume

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The electrical properties of a GaAs FET having a practical doping density and having a quarter-micrometer source-drain distance and a quarter-micrometer gate length have been studied by two-dimensional Monte Carlo particle simulation. Ids= 3.3 mA/20 μm, gm = 600 mS/mm, and fT- 160 GHz are predicted. The reasons for the high performances are discussed in terms of the electron dynamics in the device. The current saturation mechanism and the current control mechanism of the FET are made clear.

Original language	English
Pages (from-to)	448-452
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	31
Issue number	4
DOIs	https://doi.org/10.1109/T-ED.1984.21549
Publication status	Published - 1984 Apr
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/T-ED.1984.21549

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AU - Hashizume, Nobuo

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AB - The electrical properties of a GaAs FET having a practical doping density and having a quarter-micrometer source-drain distance and a quarter-micrometer gate length have been studied by two-dimensional Monte Carlo particle simulation. Ids= 3.3 mA/20 μm, gm = 600 mS/mm, and fT- 160 GHz are predicted. The reasons for the high performances are discussed in terms of the electron dynamics in the device. The current saturation mechanism and the current control mechanism of the FET are made clear.

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Principles of Operation of Short-Channel Gallium Arsenide Field-Effect Transistor Determined by Monte Carlo Method

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