PRINCIPLES OF OPERATION OF SHORT-CHANNEL GALLIUM ARSENIDE FIELD-EFFECT TRANSISTOR DETERMINED BY MONTE CARLO METHOD.

Yuji Awano, Kazutaka Tomizawa, Nobuo Hashizume

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The electrical properties of a GaAs FET having a practical doping density and having a quarter-micrometer source-drain distance and a quarter-micrometer gate length have been studied by two-dimensional Monte Carlo particle simulation. I//d//s equals 3. 3 mA/20 mu m, g//m equals 600 mS/mm, and f//T equals 160 GHz are predicted. The reasons for the high performances are discussed in terms of the electron dynamics in the device. The current saturation mechanism and the current control mechanism of the FET are made clear.

Original languageEnglish
Pages (from-to)448-452
Number of pages5
JournalIEEE Transactions on Electron Devices
VolumeED-31
Issue number4
Publication statusPublished - 1984 Apr
Externally publishedYes

Fingerprint

Gallium arsenide
Field effect transistors
gallium
Monte Carlo method
micrometers
Monte Carlo methods
field effect transistors
Electric current control
Light sources
Electric properties
electrical properties
Doping (additives)
saturation
Electrons
electrons
simulation
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

PRINCIPLES OF OPERATION OF SHORT-CHANNEL GALLIUM ARSENIDE FIELD-EFFECT TRANSISTOR DETERMINED BY MONTE CARLO METHOD. / Awano, Yuji; Tomizawa, Kazutaka; Hashizume, Nobuo.

In: IEEE Transactions on Electron Devices, Vol. ED-31, No. 4, 04.1984, p. 448-452.

Research output: Contribution to journalArticle

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