Abstract
The electrical properties of a GaAs FET having a practical doping density and having a quarter-micrometer source-drain distance and a quarter-micrometer gate length have been studied by two-dimensional Monte Carlo particle simulation. I//d//s equals 3. 3 mA/20 mu m, g//m equals 600 mS/mm, and f//T equals 160 GHz are predicted. The reasons for the high performances are discussed in terms of the electron dynamics in the device. The current saturation mechanism and the current control mechanism of the FET are made clear.
| Original language | English |
|---|---|
| Pages (from-to) | 448-452 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | ED-31 |
| Issue number | 4 |
| Publication status | Published - 1984 Apr |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Cite this
PRINCIPLES OF OPERATION OF SHORT-CHANNEL GALLIUM ARSENIDE FIELD-EFFECT TRANSISTOR DETERMINED BY MONTE CARLO METHOD. / Awano, Yuji; Tomizawa, Kazutaka; Hashizume, Nobuo.
In: IEEE Transactions on Electron Devices, Vol. ED-31, No. 4, 04.1984, p. 448-452.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - PRINCIPLES OF OPERATION OF SHORT-CHANNEL GALLIUM ARSENIDE FIELD-EFFECT TRANSISTOR DETERMINED BY MONTE CARLO METHOD.
AU - Awano, Yuji
AU - Tomizawa, Kazutaka
AU - Hashizume, Nobuo
PY - 1984/4
Y1 - 1984/4
N2 - The electrical properties of a GaAs FET having a practical doping density and having a quarter-micrometer source-drain distance and a quarter-micrometer gate length have been studied by two-dimensional Monte Carlo particle simulation. I//d//s equals 3. 3 mA/20 mu m, g//m equals 600 mS/mm, and f//T equals 160 GHz are predicted. The reasons for the high performances are discussed in terms of the electron dynamics in the device. The current saturation mechanism and the current control mechanism of the FET are made clear.
AB - The electrical properties of a GaAs FET having a practical doping density and having a quarter-micrometer source-drain distance and a quarter-micrometer gate length have been studied by two-dimensional Monte Carlo particle simulation. I//d//s equals 3. 3 mA/20 mu m, g//m equals 600 mS/mm, and f//T equals 160 GHz are predicted. The reasons for the high performances are discussed in terms of the electron dynamics in the device. The current saturation mechanism and the current control mechanism of the FET are made clear.
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UR - http://www.scopus.com/inward/citedby.url?scp=0021405434&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0021405434
VL - ED-31
SP - 448
EP - 452
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 4
ER -