Abstract
The electrical properties of a GaAs FET having a practical doping density and having a quarter-micrometer source-drain distance and a quarter-micrometer gate length have been studied by two-dimensional Monte Carlo particle simulation. Ids= 3.3 mA/20 μm, gm = 600 mS/mm, and fT- 160 GHz are predicted. The reasons for the high performances are discussed in terms of the electron dynamics in the device. The current saturation mechanism and the current control mechanism of the FET are made clear.
| Original language | English |
|---|---|
| Pages (from-to) | 448-452 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 31 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1984 Apr |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Awano, Y., Tomizawa, K., & Hashizume, N. (1984). Principles of Operation of Short-Channel Gallium Arsenide Field-Effect Transistor Determined by Monte Carlo Method. IEEE Transactions on Electron Devices, 31(4), 448-452. https://doi.org/10.1109/T-ED.1984.21549