Principles of Operation of Short-Channel Gallium Arsenide Field-Effect Transistor Determined by Monte Carlo Method

Yuji Awano, Kazutaka Tomizawa, Nobuo Hashizume

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The electrical properties of a GaAs FET having a practical doping density and having a quarter-micrometer source-drain distance and a quarter-micrometer gate length have been studied by two-dimensional Monte Carlo particle simulation. Ids= 3.3 mA/20 μm, gm = 600 mS/mm, and fT- 160 GHz are predicted. The reasons for the high performances are discussed in terms of the electron dynamics in the device. The current saturation mechanism and the current control mechanism of the FET are made clear.

Original languageEnglish
Pages (from-to)448-452
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume31
Issue number4
DOIs
Publication statusPublished - 1984 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Principles of Operation of Short-Channel Gallium Arsenide Field-Effect Transistor Determined by Monte Carlo Method'. Together they form a unique fingerprint.

Cite this