Probing the behaviors of point defects in silicon and germanium using isotope superlattices

M. Uematsu, M. Naganawa, Y. Shimizu, K. M. Itoh, K. Sawano, Y. Shiraki, E. E. Haller

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In order to probe the fundamental behaviors of point defects in silicon and germanium, we studied the self-diffusion using isotope superlattices. In ion-implanted germanium, vacancies are in thermal equilibrium and transient enhanced diffusion is not present under the experimental conditions employed in this study. In contrast, silicon self-interstitials are supersaturated in ion-implanted silicon and the self-interstitial concentration is going down to the thermal equilibrium value toward the surface.

Original languageEnglish
Title of host publicationECS Transactions - Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009
Pages51-54
Number of pages4
Edition3
DOIs
Publication statusPublished - 2009 Dec 1
EventAnalytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting - Vienna, Austria
Duration: 2009 Oct 42009 Oct 9

Publication series

NameECS Transactions
Number3
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherAnalytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting
CountryAustria
CityVienna
Period09/10/409/10/9

ASJC Scopus subject areas

  • Engineering(all)

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    Uematsu, M., Naganawa, M., Shimizu, Y., Itoh, K. M., Sawano, K., Shiraki, Y., & Haller, E. E. (2009). Probing the behaviors of point defects in silicon and germanium using isotope superlattices. In ECS Transactions - Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 (3 ed., pp. 51-54). (ECS Transactions; Vol. 25, No. 3). https://doi.org/10.1149/1.3204393