Probing the behaviors of point defects in silicon and germanium using isotope superlattices

M. Uematsu, M. Naganawa, Y. Shimizu, Kohei M Itoh, K. Sawano, Y. Shiraki, E. E. Haller

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In order to probe the fundamental behaviors of point defects in silicon and germanium, we studied the self-diffusion using isotope superlattices. In ion-implanted germanium, vacancies are in thermal equilibrium and transient enhanced diffusion is not present under the experimental conditions employed in this study. In contrast, silicon self-interstitials are supersaturated in ion-implanted silicon and the self-interstitial concentration is going down to the thermal equilibrium value toward the surface.

Original languageEnglish
Title of host publicationECS Transactions
Pages51-54
Number of pages4
Volume25
Edition3
DOIs
Publication statusPublished - 2009
EventAnalytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting - Vienna, Austria
Duration: 2009 Oct 42009 Oct 9

Other

OtherAnalytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting
CountryAustria
CityVienna
Period09/10/409/10/9

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Superlattices
Point defects
Germanium
Isotopes
Silicon
Ions
Vacancies
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Uematsu, M., Naganawa, M., Shimizu, Y., Itoh, K. M., Sawano, K., Shiraki, Y., & Haller, E. E. (2009). Probing the behaviors of point defects in silicon and germanium using isotope superlattices. In ECS Transactions (3 ed., Vol. 25, pp. 51-54) https://doi.org/10.1149/1.3204393

Probing the behaviors of point defects in silicon and germanium using isotope superlattices. / Uematsu, M.; Naganawa, M.; Shimizu, Y.; Itoh, Kohei M; Sawano, K.; Shiraki, Y.; Haller, E. E.

ECS Transactions. Vol. 25 3. ed. 2009. p. 51-54.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Uematsu, M, Naganawa, M, Shimizu, Y, Itoh, KM, Sawano, K, Shiraki, Y & Haller, EE 2009, Probing the behaviors of point defects in silicon and germanium using isotope superlattices. in ECS Transactions. 3 edn, vol. 25, pp. 51-54, Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting, Vienna, Austria, 09/10/4. https://doi.org/10.1149/1.3204393
Uematsu M, Naganawa M, Shimizu Y, Itoh KM, Sawano K, Shiraki Y et al. Probing the behaviors of point defects in silicon and germanium using isotope superlattices. In ECS Transactions. 3 ed. Vol. 25. 2009. p. 51-54 https://doi.org/10.1149/1.3204393
Uematsu, M. ; Naganawa, M. ; Shimizu, Y. ; Itoh, Kohei M ; Sawano, K. ; Shiraki, Y. ; Haller, E. E. / Probing the behaviors of point defects in silicon and germanium using isotope superlattices. ECS Transactions. Vol. 25 3. ed. 2009. pp. 51-54
@inproceedings{816fa3c3646c4cdcb29dec149d1a8536,
title = "Probing the behaviors of point defects in silicon and germanium using isotope superlattices",
abstract = "In order to probe the fundamental behaviors of point defects in silicon and germanium, we studied the self-diffusion using isotope superlattices. In ion-implanted germanium, vacancies are in thermal equilibrium and transient enhanced diffusion is not present under the experimental conditions employed in this study. In contrast, silicon self-interstitials are supersaturated in ion-implanted silicon and the self-interstitial concentration is going down to the thermal equilibrium value toward the surface.",
author = "M. Uematsu and M. Naganawa and Y. Shimizu and Itoh, {Kohei M} and K. Sawano and Y. Shiraki and Haller, {E. E.}",
year = "2009",
doi = "10.1149/1.3204393",
language = "English",
isbn = "9781566777407",
volume = "25",
pages = "51--54",
booktitle = "ECS Transactions",
edition = "3",

}

TY - GEN

T1 - Probing the behaviors of point defects in silicon and germanium using isotope superlattices

AU - Uematsu, M.

AU - Naganawa, M.

AU - Shimizu, Y.

AU - Itoh, Kohei M

AU - Sawano, K.

AU - Shiraki, Y.

AU - Haller, E. E.

PY - 2009

Y1 - 2009

N2 - In order to probe the fundamental behaviors of point defects in silicon and germanium, we studied the self-diffusion using isotope superlattices. In ion-implanted germanium, vacancies are in thermal equilibrium and transient enhanced diffusion is not present under the experimental conditions employed in this study. In contrast, silicon self-interstitials are supersaturated in ion-implanted silicon and the self-interstitial concentration is going down to the thermal equilibrium value toward the surface.

AB - In order to probe the fundamental behaviors of point defects in silicon and germanium, we studied the self-diffusion using isotope superlattices. In ion-implanted germanium, vacancies are in thermal equilibrium and transient enhanced diffusion is not present under the experimental conditions employed in this study. In contrast, silicon self-interstitials are supersaturated in ion-implanted silicon and the self-interstitial concentration is going down to the thermal equilibrium value toward the surface.

UR - http://www.scopus.com/inward/record.url?scp=77649218181&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77649218181&partnerID=8YFLogxK

U2 - 10.1149/1.3204393

DO - 10.1149/1.3204393

M3 - Conference contribution

SN - 9781566777407

VL - 25

SP - 51

EP - 54

BT - ECS Transactions

ER -