Process variants for Cu(In1-xGax)Se2 deposition investigated by in situ spectroscopic light scattering

Keiichiro Sakurai; Roland Scheer; Christian A. Kaufmann; Akimasa Yamada; Paul Fons; Yasuyuki Kimura; Tomoyuki Baba; Koji Matsubara; H. Nakanishi; Shigeru Niki

Process variants for Cu(In_1-xGa_x)Se₂ deposition investigated by in situ spectroscopic light scattering

Keiichiro Sakurai, Roland Scheer, Christian A. Kaufmann, Akimasa Yamada, Paul Fons, Yasuyuki Kimura, Tomoyuki Baba, Koji Matsubara, H. Nakanishi, Shigeru Niki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We have applied in situ diffuse spectroscopic light scattering (SLS) to the three-stage deposition process of polycrystalline Cu(In_1-xGa _x)Se₂ (CIGSe) thin films. The process has been studied by systematic variation of the major process parameters of CIGSe, such as (1) substrate temperature and (2) Ga concentration. SLS signals in the wavelength range of 400 - 800 nm has been used in order to derive the development of surface roughness during growth. SLS was found to be more sensitive to near-surface compositions than the conventional temperature monitoring techniques. Emergence of a Cu-rich phase at the surface before the stoichiometry point was observed by SLS. Optimum conditions for smoother CIGSe surfaces has been proposed for each process parameter.

Original language	English
Title of host publication	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Editors	K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages	384-387
Number of pages	4
Publication status	Published - 2003
Externally published	Yes
Event	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: 2003 May 11 → 2003 May 18

Publication series

Name	Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
Volume	A

Conference

Conference	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/Territory	Japan
City	Osaka
Period	03/5/11 → 03/5/18

Keywords

CIGS
CuInGaSe
In-situ monitoring
SLS
Surface roughness

ASJC Scopus subject areas

Engineering(all)

Cite this

Sakurai, K., Scheer, R., Kaufmann, C. A., Yamada, A., Fons, P., Kimura, Y., Baba, T., Matsubara, K., Nakanishi, H., & Niki, S. (2003). Process variants for Cu(In_1-xGa_x)Se₂ deposition investigated by in situ spectroscopic light scattering. In K. Kurokawa, L. L. Kazmerski, B. McNeils, M. Yamaguchi, & C. Wronski (Eds.), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion (pp. 384-387). (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. A).

Process variants for Cu(In_1-xGa_x)Se₂ deposition investigated by in situ spectroscopic light scattering. / Sakurai, Keiichiro; Scheer, Roland; Kaufmann, Christian A. et al.
Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. p. 384-387 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. A).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sakurai, K, Scheer, R, Kaufmann, CA, Yamada, A, Fons, P, Kimura, Y, Baba, T, Matsubara, K, Nakanishi, H & Niki, S 2003, Process variants for Cu(In_1-xGa_x)Se₂ deposition investigated by in situ spectroscopic light scattering. in K Kurokawa, LL Kazmerski, B McNeils, M Yamaguchi & C Wronski (eds), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, vol. A, pp. 384-387, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 03/5/11.

Sakurai K, Scheer R, Kaufmann CA, Yamada A, Fons P, Kimura Y et al. Process variants for Cu(In_1-xGa_x)Se₂ deposition investigated by in situ spectroscopic light scattering. In Kurokawa K, Kazmerski LL, McNeils B, Yamaguchi M, Wronski C, editors, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. 2003. p. 384-387. (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

Sakurai, Keiichiro ; Scheer, Roland ; Kaufmann, Christian A. et al. / Process variants for Cu(In_1-xGa_x)Se₂ deposition investigated by in situ spectroscopic light scattering. Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. editor / K. Kurokawa ; L.L. Kazmerski ; B. McNeils ; M. Yamaguchi ; C. Wronski. 2003. pp. 384-387 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

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abstract = "We have applied in situ diffuse spectroscopic light scattering (SLS) to the three-stage deposition process of polycrystalline Cu(In1-xGa x)Se2 (CIGSe) thin films. The process has been studied by systematic variation of the major process parameters of CIGSe, such as (1) substrate temperature and (2) Ga concentration. SLS signals in the wavelength range of 400 - 800 nm has been used in order to derive the development of surface roughness during growth. SLS was found to be more sensitive to near-surface compositions than the conventional temperature monitoring techniques. Emergence of a Cu-rich phase at the surface before the stoichiometry point was observed by SLS. Optimum conditions for smoother CIGSe surfaces has been proposed for each process parameter.",

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AU - Sakurai, Keiichiro

AU - Scheer, Roland

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AU - Kimura, Yasuyuki

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AB - We have applied in situ diffuse spectroscopic light scattering (SLS) to the three-stage deposition process of polycrystalline Cu(In1-xGa x)Se2 (CIGSe) thin films. The process has been studied by systematic variation of the major process parameters of CIGSe, such as (1) substrate temperature and (2) Ga concentration. SLS signals in the wavelength range of 400 - 800 nm has been used in order to derive the development of surface roughness during growth. SLS was found to be more sensitive to near-surface compositions than the conventional temperature monitoring techniques. Emergence of a Cu-rich phase at the surface before the stoichiometry point was observed by SLS. Optimum conditions for smoother CIGSe surfaces has been proposed for each process parameter.

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