Processing grinding-damaged silicon wafers by high-frequency nano-second laser irradiation

Jiwang Yan, Seiya Muto, Tsunemoto Kuriyagawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Ultraprecision diamond-ground silicon wafers were irradiated by a high-frequency nanosecond pulsed Nd:YAG laser equipped on a four-axis numerically controlled stage. The resulting specimens were characterized using a white-light interferometer, a micro-Raman spectroscope and a transmission electron microscope. The results indicate that around the laser beam center where the laser energy density is sufficiently high, the grinding-induced amorphous silicon was completely transformed into the single-crystal structure. The optimum conditions for one- and two-dimensional overlapping irradiation were experimentally obtained for processing large-diameter silicon wafers. It was found that the energy density level required for completely removing the dislocations is higher than that for recrystallizing the amorphous silicon. After laser irradiation, the surface unevenness has been remarkably flattened.

Original languageEnglish
Title of host publicationAdvanced Materials Research
Pages451-456
Number of pages6
Volume76-78
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event12th International Symposium on Advances in Abrasive Technology, ISAAT2009 - Gold Coast, QLD, Australia
Duration: 2009 Sep 272009 Sep 30

Publication series

NameAdvanced Materials Research
Volume76-78
ISSN (Print)10226680

Other

Other12th International Symposium on Advances in Abrasive Technology, ISAAT2009
CountryAustralia
CityGold Coast, QLD
Period09/9/2709/9/30

Fingerprint

Laser beam effects
Amorphous silicon
Silicon wafers
Lasers
Processing
Interferometers
Laser beams
Diamonds
Electron microscopes
Crystal structure
Irradiation
Single crystals

Keywords

  • Nd:YAG laser
  • Single crystal silicon
  • Subsurface damage
  • Ultraprecision grinding

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yan, J., Muto, S., & Kuriyagawa, T. (2009). Processing grinding-damaged silicon wafers by high-frequency nano-second laser irradiation. In Advanced Materials Research (Vol. 76-78, pp. 451-456). (Advanced Materials Research; Vol. 76-78). https://doi.org/10.4028/www.scientific.net/AMR.76-78.451

Processing grinding-damaged silicon wafers by high-frequency nano-second laser irradiation. / Yan, Jiwang; Muto, Seiya; Kuriyagawa, Tsunemoto.

Advanced Materials Research. Vol. 76-78 2009. p. 451-456 (Advanced Materials Research; Vol. 76-78).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yan, J, Muto, S & Kuriyagawa, T 2009, Processing grinding-damaged silicon wafers by high-frequency nano-second laser irradiation. in Advanced Materials Research. vol. 76-78, Advanced Materials Research, vol. 76-78, pp. 451-456, 12th International Symposium on Advances in Abrasive Technology, ISAAT2009, Gold Coast, QLD, Australia, 09/9/27. https://doi.org/10.4028/www.scientific.net/AMR.76-78.451
Yan J, Muto S, Kuriyagawa T. Processing grinding-damaged silicon wafers by high-frequency nano-second laser irradiation. In Advanced Materials Research. Vol. 76-78. 2009. p. 451-456. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.76-78.451
Yan, Jiwang ; Muto, Seiya ; Kuriyagawa, Tsunemoto. / Processing grinding-damaged silicon wafers by high-frequency nano-second laser irradiation. Advanced Materials Research. Vol. 76-78 2009. pp. 451-456 (Advanced Materials Research).
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