Programmable single-electron transistor logic for future low-power intelligent LSI: Proposal and room-temperature operation

Ken Uchida, Junji Koga, Ryuji Ohba, Akira Toriumi

    Research output: Contribution to journalArticle

    91 Citations (Scopus)

    Abstract

    This paper proposes, for the first time, the concept of programmable logic circuit realized with single-electron transistors (SETs). An SET having nonvolatile memory function is a key element for the programmable SET logic. The writing and erasing operations of the nonvolatile memory function make it possible to tune the phase of Coulomb oscillations. The half-period phase shift induced by the memory function makes the function of SETs complementary to that of the conventional SETs. As a result, SETs having nonvolatile memory function have the functionality of both the conventional (nMOS-like) SETs and the complementary (pMOS-like) SETs. By utilizing this fact, the function of SET circuits can be programmed with great flexibility, on the basis of the information stored by the memory functions. We have successfully fabricated SETs that operate at room temperature and observed the highest room-temperature peak-to-valley current ratio of Coulomb oscillations. The operation of the programmable SET logic is demonstrated using the room-temperature operating SETs. This is the first demonstration of room-temperature SET logic operation. The proposed programmable SET logic provides the potential for low-power, intelligent LSI chips suitable for mobile applications.

    Original languageEnglish
    Pages (from-to)1623-1630
    Number of pages8
    JournalIEEE Transactions on Electron Devices
    Volume50
    Issue number7
    DOIs
    Publication statusPublished - 2003 Aug 26

    Keywords

    • Coulomb blockade
    • Memories
    • Programmable logic devices
    • Quantum dots (QDs)
    • Quantum effect semiconductor devices
    • Silicon on insulator technology
    • Single-electron phenomena

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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