Programmable single electron transistor (SET) logic for low power intelligent silicon large scale integration (LSI) is discussed. The structure of SET with a nonvolatile single electron memory function is demonstrated. SET characteristics and nonvolatile single electron memory functions at room temperature are shown by the fabricated devices. The operation of the programmable SET logic is experimentally demonstrated in a simple circuit.
|Journal||Digest of Technical Papers - IEEE International Solid-State Circuits Conference|
|Publication status||Published - 2002 Jan 1|
|Event||2002 IEEE International Solid-State Circuits Conference - San Francisco, CA, United States|
Duration: 2002 Feb 3 → 2002 Feb 7
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering