Programmable single-electron transistor logic for low-power intelligent Si LSI

Ken Uchida, Junji Koga, Ryuji Ohba, Akira Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

30 Citations (Scopus)

Abstract

Programmable single electron transistor (SET) logic for low power intelligent silicon large scale integration (LSI) is discussed. The structure of SET with a nonvolatile single electron memory function is demonstrated. SET characteristics and nonvolatile single electron memory functions at room temperature are shown by the fabricated devices. The operation of the programmable SET logic is experimentally demonstrated in a simple circuit.

Original languageEnglish
Title of host publicationDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Pages206-207+460+195
Publication statusPublished - 2002
Externally publishedYes
Event2002 IEEE International Solid-State Circuits Conference - San Francisco, CA, United States
Duration: 2002 Feb 32002 Feb 7

Other

Other2002 IEEE International Solid-State Circuits Conference
CountryUnited States
CitySan Francisco, CA
Period02/2/302/2/7

Fingerprint

Single electron transistors
LSI circuits
Data storage equipment
Electrons
Silicon
Networks (circuits)
Temperature

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Uchida, K., Koga, J., Ohba, R., & Toriumi, A. (2002). Programmable single-electron transistor logic for low-power intelligent Si LSI. In Digest of Technical Papers - IEEE International Solid-State Circuits Conference (pp. 206-207+460+195)

Programmable single-electron transistor logic for low-power intelligent Si LSI. / Uchida, Ken; Koga, Junji; Ohba, Ryuji; Toriumi, Akira.

Digest of Technical Papers - IEEE International Solid-State Circuits Conference. 2002. p. 206-207+460+195.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Uchida, K, Koga, J, Ohba, R & Toriumi, A 2002, Programmable single-electron transistor logic for low-power intelligent Si LSI. in Digest of Technical Papers - IEEE International Solid-State Circuits Conference. pp. 206-207+460+195, 2002 IEEE International Solid-State Circuits Conference, San Francisco, CA, United States, 02/2/3.
Uchida K, Koga J, Ohba R, Toriumi A. Programmable single-electron transistor logic for low-power intelligent Si LSI. In Digest of Technical Papers - IEEE International Solid-State Circuits Conference. 2002. p. 206-207+460+195
Uchida, Ken ; Koga, Junji ; Ohba, Ryuji ; Toriumi, Akira. / Programmable single-electron transistor logic for low-power intelligent Si LSI. Digest of Technical Papers - IEEE International Solid-State Circuits Conference. 2002. pp. 206-207+460+195
@inproceedings{0bea9c26067741c88eb1960b4c42293c,
title = "Programmable single-electron transistor logic for low-power intelligent Si LSI",
abstract = "Programmable single electron transistor (SET) logic for low power intelligent silicon large scale integration (LSI) is discussed. The structure of SET with a nonvolatile single electron memory function is demonstrated. SET characteristics and nonvolatile single electron memory functions at room temperature are shown by the fabricated devices. The operation of the programmable SET logic is experimentally demonstrated in a simple circuit.",
author = "Ken Uchida and Junji Koga and Ryuji Ohba and Akira Toriumi",
year = "2002",
language = "English",
pages = "206--207+460+195",
booktitle = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

}

TY - GEN

T1 - Programmable single-electron transistor logic for low-power intelligent Si LSI

AU - Uchida, Ken

AU - Koga, Junji

AU - Ohba, Ryuji

AU - Toriumi, Akira

PY - 2002

Y1 - 2002

N2 - Programmable single electron transistor (SET) logic for low power intelligent silicon large scale integration (LSI) is discussed. The structure of SET with a nonvolatile single electron memory function is demonstrated. SET characteristics and nonvolatile single electron memory functions at room temperature are shown by the fabricated devices. The operation of the programmable SET logic is experimentally demonstrated in a simple circuit.

AB - Programmable single electron transistor (SET) logic for low power intelligent silicon large scale integration (LSI) is discussed. The structure of SET with a nonvolatile single electron memory function is demonstrated. SET characteristics and nonvolatile single electron memory functions at room temperature are shown by the fabricated devices. The operation of the programmable SET logic is experimentally demonstrated in a simple circuit.

UR - http://www.scopus.com/inward/record.url?scp=0036116430&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036116430&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0036116430

SP - 206-207+460+195

BT - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

ER -