Q-switching of Pr3+-doped LiYF4 visible lasers pumped by a high-power GaN diode laser

Junichiro Kojou, Yojiro Watanabe, Yosuke Kojima, Priyanka Agrawal, Fumihiko Kannari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

Q-switching of a Pr:LiYF4 laser at three visible wavelenghths pumped by a high-power GaN laser diode is demonstrated. The highest laser peak power of 79 W with a pulsewidth of 50 ns is obtained for 639 nm at 7.7 kHz

Original languageEnglish
Title of host publicationLasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Subtitle of host publication2010 Laser Science to Photonic Applications, CLEO/QELS 2010
Publication statusPublished - 2010 Oct 11
EventLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States
Duration: 2010 May 162010 May 21

Publication series

NameLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010

Other

OtherLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
CountryUnited States
CitySan Jose, CA
Period10/5/1610/5/21

    Fingerprint

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

Cite this

Kojou, J., Watanabe, Y., Kojima, Y., Agrawal, P., & Kannari, F. (2010). Q-switching of Pr3+-doped LiYF4 visible lasers pumped by a high-power GaN diode laser. In Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 [5500735] (Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010).