Quadrupole shift of nuclear magnetic resonance of donors in silicon at low magnetic field

P. A. Mortemousque, S. Rosenius, G. Pica, D. P. Franke, T. Sekiguchi, A. Truong, M. P. Vlasenko, L. S. Vlasenko, M. S. Brandt, R. G. Elliman, Kohei M Itoh

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Shifts from the expected nuclear magnetic resonance frequencies of antimony and bismuth donors in silicon of greater than a megahertz are observed in electrically detected magnetic resonance spectra. Defects created by ion implantation of the donors are discussed as the source of effective electric field gradients generating these shifts via quadrupole interaction with the nuclear spins. The experimental results are modeled quantitatively by molecular orbital theory for a coupled pair consisting of a donor and a spin-dependent recombination readout center.

Original languageEnglish
Article number494001
JournalNanotechnology
Volume27
Issue number49
DOIs
Publication statusPublished - 2016 Nov 8

Fingerprint

Antimony
Bismuth
Molecular orbitals
Silicon
Magnetic resonance
Ion implantation
Electric fields
Nuclear magnetic resonance
Magnetic fields
Defects

Keywords

  • group V donors
  • nuclear magnetic resonance
  • quadrupole interaction
  • silicon

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Mortemousque, P. A., Rosenius, S., Pica, G., Franke, D. P., Sekiguchi, T., Truong, A., ... Itoh, K. M. (2016). Quadrupole shift of nuclear magnetic resonance of donors in silicon at low magnetic field. Nanotechnology, 27(49), [494001]. https://doi.org/10.1088/0957-4484/27/49/494001

Quadrupole shift of nuclear magnetic resonance of donors in silicon at low magnetic field. / Mortemousque, P. A.; Rosenius, S.; Pica, G.; Franke, D. P.; Sekiguchi, T.; Truong, A.; Vlasenko, M. P.; Vlasenko, L. S.; Brandt, M. S.; Elliman, R. G.; Itoh, Kohei M.

In: Nanotechnology, Vol. 27, No. 49, 494001, 08.11.2016.

Research output: Contribution to journalArticle

Mortemousque, PA, Rosenius, S, Pica, G, Franke, DP, Sekiguchi, T, Truong, A, Vlasenko, MP, Vlasenko, LS, Brandt, MS, Elliman, RG & Itoh, KM 2016, 'Quadrupole shift of nuclear magnetic resonance of donors in silicon at low magnetic field', Nanotechnology, vol. 27, no. 49, 494001. https://doi.org/10.1088/0957-4484/27/49/494001
Mortemousque PA, Rosenius S, Pica G, Franke DP, Sekiguchi T, Truong A et al. Quadrupole shift of nuclear magnetic resonance of donors in silicon at low magnetic field. Nanotechnology. 2016 Nov 8;27(49). 494001. https://doi.org/10.1088/0957-4484/27/49/494001
Mortemousque, P. A. ; Rosenius, S. ; Pica, G. ; Franke, D. P. ; Sekiguchi, T. ; Truong, A. ; Vlasenko, M. P. ; Vlasenko, L. S. ; Brandt, M. S. ; Elliman, R. G. ; Itoh, Kohei M. / Quadrupole shift of nuclear magnetic resonance of donors in silicon at low magnetic field. In: Nanotechnology. 2016 ; Vol. 27, No. 49.
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