Quadrupole shift of nuclear magnetic resonance of donors in silicon at low magnetic field

P. A. Mortemousque, S. Rosenius, G. Pica, D. P. Franke, T. Sekiguchi, A. Truong, M. P. Vlasenko, L. S. Vlasenko, M. S. Brandt, R. G. Elliman, Kohei M Itoh

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4 Citations (Scopus)

Abstract

Shifts from the expected nuclear magnetic resonance frequencies of antimony and bismuth donors in silicon of greater than a megahertz are observed in electrically detected magnetic resonance spectra. Defects created by ion implantation of the donors are discussed as the source of effective electric field gradients generating these shifts via quadrupole interaction with the nuclear spins. The experimental results are modeled quantitatively by molecular orbital theory for a coupled pair consisting of a donor and a spin-dependent recombination readout center.

Original languageEnglish
Article number494001
JournalNanotechnology
Volume27
Issue number49
DOIs
Publication statusPublished - 2016 Nov 8

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Keywords

  • group V donors
  • nuclear magnetic resonance
  • quadrupole interaction
  • silicon

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Mortemousque, P. A., Rosenius, S., Pica, G., Franke, D. P., Sekiguchi, T., Truong, A., ... Itoh, K. M. (2016). Quadrupole shift of nuclear magnetic resonance of donors in silicon at low magnetic field. Nanotechnology, 27(49), [494001]. https://doi.org/10.1088/0957-4484/27/49/494001