Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking

J. T. Muhonen, A. Laucht, S. Simmons, J. P. Dehollain, R. Kalra, F. E. Hudson, S. Freer, Kohei M Itoh, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, A. Morello

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31P nucleus of a single P donor in isotopically purified 28Si. We find average gate fidelities of 99.95% for the electron and 99.99% for the nuclear spin. These values are above certain error correction thresholds and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware and not the intrinsic behaviour of the qubit.

Original languageEnglish
Article number154205
JournalJournal of Physics Condensed Matter
Volume27
Issue number15
DOIs
Publication statusPublished - 2015 Apr 22

Fingerprint

Silicon
Benchmarking
Atoms
Electrons
silicon
nuclear spin
atoms
Error correction
Demonstrations
quantum computation
electron spin
shot
Hardware
readout
hardware
electrons
nuclei
thresholds
estimates
pulses

Keywords

  • quantum information
  • silicon
  • single dopant

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Muhonen, J. T., Laucht, A., Simmons, S., Dehollain, J. P., Kalra, R., Hudson, F. E., ... Morello, A. (2015). Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking. Journal of Physics Condensed Matter, 27(15), [154205]. https://doi.org/10.1088/0953-8984/27/15/154205

Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking. / Muhonen, J. T.; Laucht, A.; Simmons, S.; Dehollain, J. P.; Kalra, R.; Hudson, F. E.; Freer, S.; Itoh, Kohei M; Jamieson, D. N.; McCallum, J. C.; Dzurak, A. S.; Morello, A.

In: Journal of Physics Condensed Matter, Vol. 27, No. 15, 154205, 22.04.2015.

Research output: Contribution to journalArticle

Muhonen, JT, Laucht, A, Simmons, S, Dehollain, JP, Kalra, R, Hudson, FE, Freer, S, Itoh, KM, Jamieson, DN, McCallum, JC, Dzurak, AS & Morello, A 2015, 'Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking', Journal of Physics Condensed Matter, vol. 27, no. 15, 154205. https://doi.org/10.1088/0953-8984/27/15/154205
Muhonen, J. T. ; Laucht, A. ; Simmons, S. ; Dehollain, J. P. ; Kalra, R. ; Hudson, F. E. ; Freer, S. ; Itoh, Kohei M ; Jamieson, D. N. ; McCallum, J. C. ; Dzurak, A. S. ; Morello, A. / Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking. In: Journal of Physics Condensed Matter. 2015 ; Vol. 27, No. 15.
@article{f7c42fc5031540d9aa2b97e0493ce46d,
title = "Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking",
abstract = "Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31P nucleus of a single P donor in isotopically purified 28Si. We find average gate fidelities of 99.95{\%} for the electron and 99.99{\%} for the nuclear spin. These values are above certain error correction thresholds and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware and not the intrinsic behaviour of the qubit.",
keywords = "quantum information, silicon, single dopant",
author = "Muhonen, {J. T.} and A. Laucht and S. Simmons and Dehollain, {J. P.} and R. Kalra and Hudson, {F. E.} and S. Freer and Itoh, {Kohei M} and Jamieson, {D. N.} and McCallum, {J. C.} and Dzurak, {A. S.} and A. Morello",
year = "2015",
month = "4",
day = "22",
doi = "10.1088/0953-8984/27/15/154205",
language = "English",
volume = "27",
journal = "Journal of Physics Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing Ltd.",
number = "15",

}

TY - JOUR

T1 - Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking

AU - Muhonen, J. T.

AU - Laucht, A.

AU - Simmons, S.

AU - Dehollain, J. P.

AU - Kalra, R.

AU - Hudson, F. E.

AU - Freer, S.

AU - Itoh, Kohei M

AU - Jamieson, D. N.

AU - McCallum, J. C.

AU - Dzurak, A. S.

AU - Morello, A.

PY - 2015/4/22

Y1 - 2015/4/22

N2 - Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31P nucleus of a single P donor in isotopically purified 28Si. We find average gate fidelities of 99.95% for the electron and 99.99% for the nuclear spin. These values are above certain error correction thresholds and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware and not the intrinsic behaviour of the qubit.

AB - Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31P nucleus of a single P donor in isotopically purified 28Si. We find average gate fidelities of 99.95% for the electron and 99.99% for the nuclear spin. These values are above certain error correction thresholds and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware and not the intrinsic behaviour of the qubit.

KW - quantum information

KW - silicon

KW - single dopant

UR - http://www.scopus.com/inward/record.url?scp=84925777886&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84925777886&partnerID=8YFLogxK

U2 - 10.1088/0953-8984/27/15/154205

DO - 10.1088/0953-8984/27/15/154205

M3 - Article

VL - 27

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 15

M1 - 154205

ER -