Quantitative evaluation of silicon displacement induced by arsenic implantation using silicon isotope superlattices

Yasuo Shimizu, Masashi Uematsu, Kohei M Itoh, Akio Takano, Kentarou Sawano, Yasuhiro Shiraki

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We established a new method for evaluating quantitatively the silicon atomic displacement as a function of the depth from the surface induced by arsenic implantation into a silicon wafer. A simulation based on a convolution integral was developed successfully to reproduce the experimental depth profiles of isotopes in the arsenic-implanted 28Si/30Si isotope superlattices, from which the average distance of the silicon displacements due to the collisions with implanted arsenic is obtained. We show that it takes the average displacement of ̃0.5 nm to make the structure appear amorphous by transmission electron microscopy.

Original languageEnglish
Article number021401
JournalApplied Physics Express
Volume1
Issue number2
DOIs
Publication statusPublished - 2008 Feb

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silicon isotopes
Superlattices
Arsenic
arsenic
Isotopes
superlattices
implantation
Silicon
evaluation
silicon
isotopes
Silicon wafers
Convolution
convolution integrals
wafers
Transmission electron microscopy
transmission electron microscopy
collisions
profiles
simulation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Quantitative evaluation of silicon displacement induced by arsenic implantation using silicon isotope superlattices. / Shimizu, Yasuo; Uematsu, Masashi; Itoh, Kohei M; Takano, Akio; Sawano, Kentarou; Shiraki, Yasuhiro.

In: Applied Physics Express, Vol. 1, No. 2, 021401, 02.2008.

Research output: Contribution to journalArticle

Shimizu, Yasuo ; Uematsu, Masashi ; Itoh, Kohei M ; Takano, Akio ; Sawano, Kentarou ; Shiraki, Yasuhiro. / Quantitative evaluation of silicon displacement induced by arsenic implantation using silicon isotope superlattices. In: Applied Physics Express. 2008 ; Vol. 1, No. 2.
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