Quantum-cross tunneling junction for high density memory

Hideo Kaiju, Kenji Kondo, Akira Ishibashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We calculated transport properties of edge-to-edge quantum cross structure that consists of two metal nano-ribbons having edge-to-edge configuration with a tunnel barrier and showed current-voltage characteristics depending on the metal-ribbon thickness (5-30 nm), the barrier height (0.5-1.5 eV) and the barrier thickness (0.5-1.0 nm). Interesting behavior of transport properties is that the metal-ribbon thickness affects the current density due to the quantization of nano-ribbon and also the current density, being dependent on the barrier height and the barrier thickness, decreases with high and thick barrier. These calculated results indicate that we can precisely obtain the information on the material sandwiched between two electrodes, such as the barrier height and the barrier thickness, by a fit of experimental data to our derived equation, and these approaches result in a distinction between the sandwiched material and the electrode.

Original languageEnglish
Title of host publicationNanostructured and Patterned Materials for Information Storage
Pages32-37
Number of pages6
Publication statusPublished - 2006 Dec 1
Externally publishedYes
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 2006 Nov 272006 Dec 1

Publication series

NameMaterials Research Society Symposium Proceedings
Volume961
ISSN (Print)0272-9172

Other

Other2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period06/11/2706/12/1

Fingerprint

Metals
Data storage equipment
Transport properties
Current density
ribbons
Electrodes
Current voltage characteristics
Tunnels
transport properties
metals
current density
electrodes
tunnels
electric potential
configurations

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kaiju, H., Kondo, K., & Ishibashi, A. (2006). Quantum-cross tunneling junction for high density memory. In Nanostructured and Patterned Materials for Information Storage (pp. 32-37). (Materials Research Society Symposium Proceedings; Vol. 961).

Quantum-cross tunneling junction for high density memory. / Kaiju, Hideo; Kondo, Kenji; Ishibashi, Akira.

Nanostructured and Patterned Materials for Information Storage. 2006. p. 32-37 (Materials Research Society Symposium Proceedings; Vol. 961).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kaiju, H, Kondo, K & Ishibashi, A 2006, Quantum-cross tunneling junction for high density memory. in Nanostructured and Patterned Materials for Information Storage. Materials Research Society Symposium Proceedings, vol. 961, pp. 32-37, 2006 MRS Fall Meeting, Boston, MA, United States, 06/11/27.
Kaiju H, Kondo K, Ishibashi A. Quantum-cross tunneling junction for high density memory. In Nanostructured and Patterned Materials for Information Storage. 2006. p. 32-37. (Materials Research Society Symposium Proceedings).
Kaiju, Hideo ; Kondo, Kenji ; Ishibashi, Akira. / Quantum-cross tunneling junction for high density memory. Nanostructured and Patterned Materials for Information Storage. 2006. pp. 32-37 (Materials Research Society Symposium Proceedings).
@inproceedings{42d977ca99e94b8d9c53f0328f47d692,
title = "Quantum-cross tunneling junction for high density memory",
abstract = "We calculated transport properties of edge-to-edge quantum cross structure that consists of two metal nano-ribbons having edge-to-edge configuration with a tunnel barrier and showed current-voltage characteristics depending on the metal-ribbon thickness (5-30 nm), the barrier height (0.5-1.5 eV) and the barrier thickness (0.5-1.0 nm). Interesting behavior of transport properties is that the metal-ribbon thickness affects the current density due to the quantization of nano-ribbon and also the current density, being dependent on the barrier height and the barrier thickness, decreases with high and thick barrier. These calculated results indicate that we can precisely obtain the information on the material sandwiched between two electrodes, such as the barrier height and the barrier thickness, by a fit of experimental data to our derived equation, and these approaches result in a distinction between the sandwiched material and the electrode.",
author = "Hideo Kaiju and Kenji Kondo and Akira Ishibashi",
year = "2006",
month = "12",
day = "1",
language = "English",
isbn = "9781604234138",
series = "Materials Research Society Symposium Proceedings",
pages = "32--37",
booktitle = "Nanostructured and Patterned Materials for Information Storage",

}

TY - GEN

T1 - Quantum-cross tunneling junction for high density memory

AU - Kaiju, Hideo

AU - Kondo, Kenji

AU - Ishibashi, Akira

PY - 2006/12/1

Y1 - 2006/12/1

N2 - We calculated transport properties of edge-to-edge quantum cross structure that consists of two metal nano-ribbons having edge-to-edge configuration with a tunnel barrier and showed current-voltage characteristics depending on the metal-ribbon thickness (5-30 nm), the barrier height (0.5-1.5 eV) and the barrier thickness (0.5-1.0 nm). Interesting behavior of transport properties is that the metal-ribbon thickness affects the current density due to the quantization of nano-ribbon and also the current density, being dependent on the barrier height and the barrier thickness, decreases with high and thick barrier. These calculated results indicate that we can precisely obtain the information on the material sandwiched between two electrodes, such as the barrier height and the barrier thickness, by a fit of experimental data to our derived equation, and these approaches result in a distinction between the sandwiched material and the electrode.

AB - We calculated transport properties of edge-to-edge quantum cross structure that consists of two metal nano-ribbons having edge-to-edge configuration with a tunnel barrier and showed current-voltage characteristics depending on the metal-ribbon thickness (5-30 nm), the barrier height (0.5-1.5 eV) and the barrier thickness (0.5-1.0 nm). Interesting behavior of transport properties is that the metal-ribbon thickness affects the current density due to the quantization of nano-ribbon and also the current density, being dependent on the barrier height and the barrier thickness, decreases with high and thick barrier. These calculated results indicate that we can precisely obtain the information on the material sandwiched between two electrodes, such as the barrier height and the barrier thickness, by a fit of experimental data to our derived equation, and these approaches result in a distinction between the sandwiched material and the electrode.

UR - http://www.scopus.com/inward/record.url?scp=40949135723&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=40949135723&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:40949135723

SN - 9781604234138

T3 - Materials Research Society Symposium Proceedings

SP - 32

EP - 37

BT - Nanostructured and Patterned Materials for Information Storage

ER -