Abstract
We calculated transport properties of edge-to-edge quantum cross structure that consists of two metal nano-ribbons having edge-to-edge configuration with a tunnel barrier and showed current-voltage characteristics depending on the metal-ribbon thickness (5-30 nm), the barrier height (0.5-1.5 eV) and the barrier thickness (0.5-1.0 nm). Interesting behavior of transport properties is that the metal-ribbon thickness affects the current density due to the quantization of nano-ribbon and also the current density, being dependent on the barrier height and the barrier thickness, decreases with high and thick barrier. These calculated results indicate that we can precisely obtain the information on the material sandwiched between two electrodes, such as the barrier height and the barrier thickness, by a fit of experimental data to our derived equation, and these approaches result in a distinction between the sandwiched material and the electrode.
| Original language | English |
|---|---|
| Title of host publication | Nanostructured and Patterned Materials for Information Storage |
| Pages | 32-37 |
| Number of pages | 6 |
| Publication status | Published - 2006 Dec 1 |
| Externally published | Yes |
| Event | 2006 MRS Fall Meeting - Boston, MA, United States Duration: 2006 Nov 27 → 2006 Dec 1 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 961 |
| ISSN (Print) | 0272-9172 |
Other
| Other | 2006 MRS Fall Meeting |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 06/11/27 → 06/12/1 |
Fingerprint
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Quantum-cross tunneling junction for high density memory. / Kaiju, Hideo; Kondo, Kenji; Ishibashi, Akira.
Nanostructured and Patterned Materials for Information Storage. 2006. p. 32-37 (Materials Research Society Symposium Proceedings; Vol. 961).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Quantum-cross tunneling junction for high density memory
AU - Kaiju, Hideo
AU - Kondo, Kenji
AU - Ishibashi, Akira
PY - 2006/12/1
Y1 - 2006/12/1
N2 - We calculated transport properties of edge-to-edge quantum cross structure that consists of two metal nano-ribbons having edge-to-edge configuration with a tunnel barrier and showed current-voltage characteristics depending on the metal-ribbon thickness (5-30 nm), the barrier height (0.5-1.5 eV) and the barrier thickness (0.5-1.0 nm). Interesting behavior of transport properties is that the metal-ribbon thickness affects the current density due to the quantization of nano-ribbon and also the current density, being dependent on the barrier height and the barrier thickness, decreases with high and thick barrier. These calculated results indicate that we can precisely obtain the information on the material sandwiched between two electrodes, such as the barrier height and the barrier thickness, by a fit of experimental data to our derived equation, and these approaches result in a distinction between the sandwiched material and the electrode.
AB - We calculated transport properties of edge-to-edge quantum cross structure that consists of two metal nano-ribbons having edge-to-edge configuration with a tunnel barrier and showed current-voltage characteristics depending on the metal-ribbon thickness (5-30 nm), the barrier height (0.5-1.5 eV) and the barrier thickness (0.5-1.0 nm). Interesting behavior of transport properties is that the metal-ribbon thickness affects the current density due to the quantization of nano-ribbon and also the current density, being dependent on the barrier height and the barrier thickness, decreases with high and thick barrier. These calculated results indicate that we can precisely obtain the information on the material sandwiched between two electrodes, such as the barrier height and the barrier thickness, by a fit of experimental data to our derived equation, and these approaches result in a distinction between the sandwiched material and the electrode.
UR - http://www.scopus.com/inward/record.url?scp=40949135723&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=40949135723&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:40949135723
SN - 9781604234138
T3 - Materials Research Society Symposium Proceedings
SP - 32
EP - 37
BT - Nanostructured and Patterned Materials for Information Storage
ER -