Quantum energy and charging energy in point contact MOSFETs acting as single electron transistors

Toshiro Hiramoto, Hiroki Ishikuro

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The charging energy and quantum energy in silicon single electron transistors have been investigated. The devices were fabricated in the form of point contact MOSFETs, some of which show the Coulomb blockade oscillations at room temperature. The charging energy and quantum energy were derived by fitting the simulation results to the experimental data. It was clearly found that the quantum energy became comparable with the charging energy when the dot size is smaller than 10-20 nm and the charging energy is more than 20 meV. These results indicate that the quantum effects should be taken into account even in silicon devices when silicon single electron transistors or MOSFETs smaller than about 20 nm are designed.

Original languageEnglish
Pages (from-to)263-267
Number of pages5
JournalSuperlattices and Microstructures
Volume25
Issue number1-2
Publication statusPublished - 1999 Jan
Externally publishedYes

Fingerprint

Single electron transistors
single electron transistors
Point contacts
Silicon
charging
field effect transistors
Coulomb blockade
silicon transistors
energy
Temperature
oscillations
silicon
room temperature

Keywords

  • Charging energy
  • Coulomb blockade
  • MOSFET
  • Quantum confinement
  • Quantum dot

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Quantum energy and charging energy in point contact MOSFETs acting as single electron transistors. / Hiramoto, Toshiro; Ishikuro, Hiroki.

In: Superlattices and Microstructures, Vol. 25, No. 1-2, 01.1999, p. 263-267.

Research output: Contribution to journalArticle

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