Quantum mechanical effects in the silicon quantum dot in a single-electron transistor

Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journalArticle

165 Citations (Scopus)

Abstract

The quantum mechanical effects in silicon single-electron transistors have been investigated. The devices have been fabricated in the form of point contact metal-oxide-semiconductor field-effect transistors with various channel widths using electron beam lithography and the anisotropic etching technique on silicon-on-insulator substrates. The device with an extremely narrow channel shows Coulomb blockade oscillations at room temperature. At low temperatures, negative differential conductances and fine structures are superposed on the device characteristics, which are attributed to the quantum mechanical effects in the silicon quantum dot in the channel. The energy spectrum of the dot is extracted from the experimental results.

Original languageEnglish
Pages (from-to)3691-3693
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number25
Publication statusPublished - 1997 Dec 22
Externally publishedYes

Fingerprint

single electron transistors
quantum dots
silicon
silicon transistors
metal oxide semiconductors
energy spectra
field effect transistors
lithography
fine structure
insulators
etching
electron beams
oscillations
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Quantum mechanical effects in the silicon quantum dot in a single-electron transistor. / Ishikuro, Hiroki; Hiramoto, Toshiro.

In: Applied Physics Letters, Vol. 71, No. 25, 22.12.1997, p. 3691-3693.

Research output: Contribution to journalArticle

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