Radical transport in the narrow-gap-reactive-ion etcher in SF6 by the relaxation continuum model

Nobuhiko Nakano, Zoran Lj Petrovic, Toshiaki Makabe

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We have established a selfconsistent modeling of a narrow-gap reactive ion etcher (N-gap-RIE) with parallel-plate geometry in SF6. Using the discharge structure of the relaxation continuum model, we have numerically predicted the radical transport to the surface of N-gap-RIE in SF6 under two different surface reactions. The spatiotemporal profiles of radicals and neutrals are demonstrated for a long time scale (0-1 s) at between 0.05 Torr and 1.0 Torr at 13.56 MHz. The estimated etch rate of Si wafer with F radicals agrees reasonably well with the previous experimental value obtained under a low-power condition. It is stressed from the present result that the ion-molecule reactions for the generation of F radicals as well as the electron impact dissociation of SF6 are of great importance.

Original languageEnglish
Pages (from-to)2223-2230
Number of pages8
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume33
Issue number4 B
Publication statusPublished - 1994 Apr
Externally publishedYes

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continuums
Ions
ions
Surface reactions
parallel plates
surface reactions
electron impact
Molecules
Geometry
Electrons
wafers
dissociation
profiles
geometry
molecules

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Radical transport in the narrow-gap-reactive-ion etcher in SF6 by the relaxation continuum model. / Nakano, Nobuhiko; Petrovic, Zoran Lj; Makabe, Toshiaki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 33, No. 4 B, 04.1994, p. 2223-2230.

Research output: Contribution to journalArticle

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