Radio frequency GDOES depth profiling analysis of a B-doped diamond film deposited onto Si by microwave plasma CVD

K. Shimizu, Y. Einaga, A. Fujishima, K. Ohnishi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Analysis of a boron-doped diamond film, ∼13 μm thick, deposited onto a mirror-finished n-Si(100) substrate using microwave plasma chemical vapour deposition (CVD), demonstrates the suitability of radiofrequency glow discharge optical emission spectroscopy (rf-GDOES) for rapid depth profiling analysis. The distributions of boron and hydrogen are revealed clearly. Intrestingly, the sputtering of the diamond film is accompanied by smoothing of the initial rough, faceted surface, implying that the ridges sputter more rapidly than the valleys during analysis.

Original languageEnglish
Pages (from-to)35-40
Number of pages6
JournalSurface and Interface Analysis
Volume33
Issue number1
DOIs
Publication statusPublished - 2002 Jan

Keywords

  • CVD
  • Diamond
  • Films
  • GDOES
  • Glow discharge optical emission spectroscopy

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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