Radio frequency GDOES depth profiling analysis of a B-doped diamond film deposited onto Si by microwave plasma CVD

K. Shimizu, Yasuaki Einaga, K. Ohnishi, A. Fujishima, H. Habazaki, P. Skeldon, G. E. Thompson

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Analysis of a boron-doped diamond film, ∼13 μm thick, deposited onto a mirror-finished n-Si(100) substrate using microwave plasma chemical vapour deposition (CVD), demonstrates the suitability of radiofrequency glow discharge optical emission spectroscopy (rf-GDOES) for rapid depth profiling analysis. The distributions of boron and hydrogen are revealed clearly. Intrestingly, the sputtering of the diamond film is accompanied by smoothing of the initial rough, faceted surface, implying that the ridges sputter more rapidly than the valleys during analysis.

Original languageEnglish
Pages (from-to)35-40
Number of pages6
JournalSurface and Interface Analysis
Volume33
Issue number1
DOIs
Publication statusPublished - 2002 Jan

Fingerprint

Boron
Depth profiling
Diamond films
diamond films
Chemical vapor deposition
radio frequencies
boron
Microwaves
vapor deposition
Plasmas
microwaves
Optical emission spectroscopy
Glow discharges
optical emission spectroscopy
smoothing
glow discharges
Sputtering
valleys
ridges
Hydrogen

Keywords

  • CVD
  • Diamond
  • Films
  • GDOES
  • Glow discharge optical emission spectroscopy

ASJC Scopus subject areas

  • Colloid and Surface Chemistry
  • Physical and Theoretical Chemistry

Cite this

Radio frequency GDOES depth profiling analysis of a B-doped diamond film deposited onto Si by microwave plasma CVD. / Shimizu, K.; Einaga, Yasuaki; Ohnishi, K.; Fujishima, A.; Habazaki, H.; Skeldon, P.; Thompson, G. E.

In: Surface and Interface Analysis, Vol. 33, No. 1, 01.2002, p. 35-40.

Research output: Contribution to journalArticle

Shimizu, K. ; Einaga, Yasuaki ; Ohnishi, K. ; Fujishima, A. ; Habazaki, H. ; Skeldon, P. ; Thompson, G. E. / Radio frequency GDOES depth profiling analysis of a B-doped diamond film deposited onto Si by microwave plasma CVD. In: Surface and Interface Analysis. 2002 ; Vol. 33, No. 1. pp. 35-40.
@article{e40327df51294ba689ec815af22e9c66,
title = "Radio frequency GDOES depth profiling analysis of a B-doped diamond film deposited onto Si by microwave plasma CVD",
abstract = "Analysis of a boron-doped diamond film, ∼13 μm thick, deposited onto a mirror-finished n-Si(100) substrate using microwave plasma chemical vapour deposition (CVD), demonstrates the suitability of radiofrequency glow discharge optical emission spectroscopy (rf-GDOES) for rapid depth profiling analysis. The distributions of boron and hydrogen are revealed clearly. Intrestingly, the sputtering of the diamond film is accompanied by smoothing of the initial rough, faceted surface, implying that the ridges sputter more rapidly than the valleys during analysis.",
keywords = "CVD, Diamond, Films, GDOES, Glow discharge optical emission spectroscopy",
author = "K. Shimizu and Yasuaki Einaga and K. Ohnishi and A. Fujishima and H. Habazaki and P. Skeldon and Thompson, {G. E.}",
year = "2002",
month = "1",
doi = "10.1002/sia.1158",
language = "English",
volume = "33",
pages = "35--40",
journal = "Surface and Interface Analysis",
issn = "0142-2421",
publisher = "John Wiley and Sons Ltd",
number = "1",

}

TY - JOUR

T1 - Radio frequency GDOES depth profiling analysis of a B-doped diamond film deposited onto Si by microwave plasma CVD

AU - Shimizu, K.

AU - Einaga, Yasuaki

AU - Ohnishi, K.

AU - Fujishima, A.

AU - Habazaki, H.

AU - Skeldon, P.

AU - Thompson, G. E.

PY - 2002/1

Y1 - 2002/1

N2 - Analysis of a boron-doped diamond film, ∼13 μm thick, deposited onto a mirror-finished n-Si(100) substrate using microwave plasma chemical vapour deposition (CVD), demonstrates the suitability of radiofrequency glow discharge optical emission spectroscopy (rf-GDOES) for rapid depth profiling analysis. The distributions of boron and hydrogen are revealed clearly. Intrestingly, the sputtering of the diamond film is accompanied by smoothing of the initial rough, faceted surface, implying that the ridges sputter more rapidly than the valleys during analysis.

AB - Analysis of a boron-doped diamond film, ∼13 μm thick, deposited onto a mirror-finished n-Si(100) substrate using microwave plasma chemical vapour deposition (CVD), demonstrates the suitability of radiofrequency glow discharge optical emission spectroscopy (rf-GDOES) for rapid depth profiling analysis. The distributions of boron and hydrogen are revealed clearly. Intrestingly, the sputtering of the diamond film is accompanied by smoothing of the initial rough, faceted surface, implying that the ridges sputter more rapidly than the valleys during analysis.

KW - CVD

KW - Diamond

KW - Films

KW - GDOES

KW - Glow discharge optical emission spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=0036173272&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036173272&partnerID=8YFLogxK

U2 - 10.1002/sia.1158

DO - 10.1002/sia.1158

M3 - Article

AN - SCOPUS:0036173272

VL - 33

SP - 35

EP - 40

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

SN - 0142-2421

IS - 1

ER -