Radio-frequency plasma modeling for low-temperature processing

Toshiaki Makabe

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Plasma processing using a radio-frequency (rf) plasma for semiconductor device fabrication has been developed rapidly during the last decade. As the basis of plasma processing, an rf electron swarm transport under nonequilibrium conditions is described by the Boltzmann equation. The system equations and the various methods of rf plasma modeling are given.

Original languageEnglish
Pages (from-to)127-154
Number of pages28
JournalAdvances in Atomic, Molecular and Optical Physics
Volume44
Issue numberC
DOIs
Publication statusPublished - 2001 Dec 1

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ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Electronic, Optical and Magnetic Materials

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