Radio-frequency plasma modeling for low-temperature processing

Toshiaki Makabe

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Plasma processing using a radio-frequency (rf) plasma for semiconductor device fabrication has been developed rapidly during the last decade. As the basis of plasma processing, an rf electron swarm transport under nonequilibrium conditions is described by the Boltzmann equation. The system equations and the various methods of rf plasma modeling are given.

Original languageEnglish
Pages (from-to)127-154
Number of pages28
JournalAdvances in Atomic, Molecular and Optical Physics
Volume44
Issue numberC
DOIs
Publication statusPublished - 2001

Fingerprint

Plasma applications
radio frequencies
Plasmas
Processing
Boltzmann equation
Semiconductor devices
Temperature
nonequilibrium conditions
semiconductor devices
Fabrication
Electrons
fabrication
electrons

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Radio-frequency plasma modeling for low-temperature processing. / Makabe, Toshiaki.

In: Advances in Atomic, Molecular and Optical Physics, Vol. 44, No. C, 2001, p. 127-154.

Research output: Contribution to journalArticle

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