Raman determination of stresses and strains in 3C-SiC films grown on 6-inch Si substrates

C. Hagiwara, Kohei M Itoh, J. Muto, H. Nagasawa, K. Yagi, H. Harima, K. Mizoguchi, S. Nakashima

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We demonstrate Raman spectroscopy determination of stresses and strains as a function of distance from the growth interface in a 2.2 μm thick 3C-SiC film grown on a 6-inch Si substrate using low-pressure chemical vapor deposition. The Raman measurements have been performed with the back-scattering geometry on the SiC film that has been reactive ion etched to various thicknesses (0.44 - 2.2 μm). The values of the stress and strain determined as a function of the distance from the interface show maximum at the interface, decrease rapidly between 0 and 0.7 μm, and become constant between 0.7 and 2.2 μm. We believe this is a clear evidence for relaxation of stress and strain at the first 0.7 μm growth of SiC films on Si.

Original languageEnglish
Pages (from-to)669-672
Number of pages4
JournalMaterials Science Forum
Volume264-268
Issue numberPART 1
Publication statusPublished - 1998

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Substrates
Low pressure chemical vapor deposition
Raman spectroscopy
low pressure
vapor deposition
Scattering
Ions
Geometry
geometry
scattering
ions

Keywords

  • 3C-SiC/Si
  • Raman Spectroscopy
  • Strains
  • Stresses

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Hagiwara, C., Itoh, K. M., Muto, J., Nagasawa, H., Yagi, K., Harima, H., ... Nakashima, S. (1998). Raman determination of stresses and strains in 3C-SiC films grown on 6-inch Si substrates. Materials Science Forum, 264-268(PART 1), 669-672.

Raman determination of stresses and strains in 3C-SiC films grown on 6-inch Si substrates. / Hagiwara, C.; Itoh, Kohei M; Muto, J.; Nagasawa, H.; Yagi, K.; Harima, H.; Mizoguchi, K.; Nakashima, S.

In: Materials Science Forum, Vol. 264-268, No. PART 1, 1998, p. 669-672.

Research output: Contribution to journalArticle

Hagiwara, C, Itoh, KM, Muto, J, Nagasawa, H, Yagi, K, Harima, H, Mizoguchi, K & Nakashima, S 1998, 'Raman determination of stresses and strains in 3C-SiC films grown on 6-inch Si substrates', Materials Science Forum, vol. 264-268, no. PART 1, pp. 669-672.
Hagiwara C, Itoh KM, Muto J, Nagasawa H, Yagi K, Harima H et al. Raman determination of stresses and strains in 3C-SiC films grown on 6-inch Si substrates. Materials Science Forum. 1998;264-268(PART 1):669-672.
Hagiwara, C. ; Itoh, Kohei M ; Muto, J. ; Nagasawa, H. ; Yagi, K. ; Harima, H. ; Mizoguchi, K. ; Nakashima, S. / Raman determination of stresses and strains in 3C-SiC films grown on 6-inch Si substrates. In: Materials Science Forum. 1998 ; Vol. 264-268, No. PART 1. pp. 669-672.
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AU - Harima, H.

AU - Mizoguchi, K.

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