Raman determination of stresses and strains in 3C-SiC films grown on 6-inch Si substrates

C. Hagiwara, K. M. Itoh, J. Muto, H. Nagasawa, K. Yagi, H. Harima, K. Mizoguchi, S. Nakashima

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We demonstrate Raman spectroscopy determination of stresses and strains as a function of distance from the growth interface in a 2.2 μm thick 3C-SiC film grown on a 6-inch Si substrate using low-pressure chemical vapor deposition. The Raman measurements have been performed with the back-scattering geometry on the SiC film that has been reactive ion etched to various thicknesses (0.44 - 2.2 μm). The values of the stress and strain determined as a function of the distance from the interface show maximum at the interface, decrease rapidly between 0 and 0.7 μm, and become constant between 0.7 and 2.2 μm. We believe this is a clear evidence for relaxation of stress and strain at the first 0.7 μm growth of SiC films on Si.

Original languageEnglish
Pages (from-to)669-672
Number of pages4
JournalMaterials Science Forum
Issue numberPART 1
Publication statusPublished - 1998 Dec 1



  • 3C-SiC/Si
  • Raman Spectroscopy
  • Strains
  • Stresses

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Hagiwara, C., Itoh, K. M., Muto, J., Nagasawa, H., Yagi, K., Harima, H., Mizoguchi, K., & Nakashima, S. (1998). Raman determination of stresses and strains in 3C-SiC films grown on 6-inch Si substrates. Materials Science Forum, 264-268(PART 1), 669-672.