Random telegraph signals and low-frequency noise in n-metal-oxide-semiconductor field-effect transistors with ultranarrow channels

H. M. Bu, Y. Shi, X. L. Yuan, J. Wu, S. L. Gu, Y. D. Zheng, H. Majima, Hiroki Ishikuro, T. Hiramoto

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Abstract

The characteristics of low-frequency noise in n-metal-oxide-semiconductor field-effect transistors with ultranarrow channels have been investigated through random telegraph signals and low-frequency noise spectroscopy. Random telegraph signals with very large amplitude (∼70%) are observed in weak inversion at room temperature. Low-frequency noise spectra having both 1/fn and Lorentzian type are found separately in the same channel at various gate bias voltages. The observations strongly suggest that the low-frequency noise is dominated by carrier mobility fluctuation in weak inversion and by carrier number fluctuation under high-field conditions in an ultranarrow channel.

Original languageEnglish
Pages (from-to)3259-3261
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number22
Publication statusPublished - 2000 May 29
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Bu, H. M., Shi, Y., Yuan, X. L., Wu, J., Gu, S. L., Zheng, Y. D., Majima, H., Ishikuro, H., & Hiramoto, T. (2000). Random telegraph signals and low-frequency noise in n-metal-oxide-semiconductor field-effect transistors with ultranarrow channels. Applied Physics Letters, 76(22), 3259-3261.