Random telegraph signals of tetrahedral-shaped recess field-effect transistor memory cell with a hole-trapping floating quantum dot gate

Masashi Shima, Yoshiki Sakuma, Yuji Awano, Naoki Yokoyama

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

An AlGaAs/InGaAs heterojunction field-effect transistor (FET) memory cell in a tetrahedral-shaped recess (TSR) on the (111)B GaAs substrate was fabricated and investigated. The TSR–FET memory cell has a channel on the (111)A facet surfaces of the recess and a hole-trapping quantum dot (QD) as a floating gate at the bottom. Memory operations were achieved at temperatures up to 130 K, and random telegraph signals (RTSs) with a temperature dependence were observed in the retention characteristics. After our analysis of RTSs, the activation energy of hole capture and emission processes in the TSR QD were estimated to be 260 and 190 meV, respectively.

Original languageEnglish
Pages (from-to)441-443
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number3
DOIs
Publication statusPublished - 2000 Jul 17
Externally publishedYes

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recesses
floating
field effect transistors
trapping
quantum dots
cells
aluminum gallium arsenides
heterojunctions
flat surfaces
activation energy
temperature dependence
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Random telegraph signals of tetrahedral-shaped recess field-effect transistor memory cell with a hole-trapping floating quantum dot gate. / Shima, Masashi; Sakuma, Yoshiki; Awano, Yuji; Yokoyama, Naoki.

In: Applied Physics Letters, Vol. 77, No. 3, 17.07.2000, p. 441-443.

Research output: Contribution to journalArticle

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