TY - JOUR
T1 - Rashba-Edelstein Magnetoresistance in Metallic Heterostructures
AU - Nakayama, Hiroyasu
AU - Kanno, Yusuke
AU - An, Hongyu
AU - Tashiro, Takaharu
AU - Haku, Satoshi
AU - Nomura, Akiyo
AU - Ando, Kazuya
N1 - Funding Information:
This work was supported in part by JSPS KAKENHI Grants No.26790037, No.26220604, No.26103004, PRESTO-JST Innovative nano-electronics through interdisciplinary collaboration among material, device and system layers, the Mitsubishi Foundation, the Mizuho Foundation for the Promotion of Science, the Casio Science Promotion Foundation, and the Murata Science Foundation
PY - 2016/9/7
Y1 - 2016/9/7
N2 - We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.
AB - We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.
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U2 - 10.1103/PhysRevLett.117.116602
DO - 10.1103/PhysRevLett.117.116602
M3 - Article
AN - SCOPUS:84988826263
VL - 117
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 11
M1 - 116602
ER -