Recent developments concerning the sputter growth of chalcogenide-based layered phase-change materials

Yuta Saito, Misako Morota, Kotaro Makino, Junji Tominaga, Alexander V. Kolobov, Paul Fons

Research output: Contribution to journalReview articlepeer-review

Abstract

This paper reviews recent developments in the sputter growth of chalcogenide thin films for phase-change memory applications. We focus primarily on the growth of highly oriented Sb2Te3, which is a layered material. Sb2Te3 is an end point compound of the GeTe–Sb2Te3 pseudobinary tie-line and an important component of heterogeneously structured phase-change materials. Some key growth parameters are introduced for the fabrication of highly oriented films. The optimization of the sputtering conditions enables the growth of highly oriented films on a variety of substrates even on flexible surfaces. Furthermore, the same techniques are found to be applicable for the deposition of similar materials including Ge-Sb-Te, Bi–Te, Bi2Te3–Sb2Te3, and Bi–Sb alloys. In order to meet the increasing demand for nonvolatile memory as well as other novel electronic devices, the fabrication of high-quality thin films by an industry friendly method is crucial.

Original languageEnglish
Article number106079
JournalMaterials Science in Semiconductor Processing
Volume135
DOIs
Publication statusPublished - 2021 Nov 15

Keywords

  • Chalcogenides
  • Highly oriented films
  • Non-volatile memory
  • Phase-change materials
  • SbTe
  • Sputtering

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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