TY - JOUR
T1 - Recent developments concerning the sputter growth of chalcogenide-based layered phase-change materials
AU - Saito, Yuta
AU - Morota, Misako
AU - Makino, Kotaro
AU - Tominaga, Junji
AU - Kolobov, Alexander V.
AU - Fons, Paul
N1 - Funding Information:
This study was supported by JST CREST No. JPMJCR14F1 , JSPS KAKENHI (Grant Nos. 17H02908 , 18K14306 , and 19H02619 ), and JSPS-RFBR Bilateral Joint Research Projects (Japan-Russia) (Grant Nos. JPJSBP120204815 and RFBR 20-52-50012 ). We thank Mr. Hiroshi Sugita and Mr. Kouji Sakata in ULVAC KYUSHU for their technical assistance in the sputtering equipment (QAM-4) and Dr. Kosuke Kurushima (Toray Research Center, Inc.) for his assistance in TEM observations.
Publisher Copyright:
© 2021 The Authors
PY - 2021/11/15
Y1 - 2021/11/15
N2 - This paper reviews recent developments in the sputter growth of chalcogenide thin films for phase-change memory applications. We focus primarily on the growth of highly oriented Sb2Te3, which is a layered material. Sb2Te3 is an end point compound of the GeTe–Sb2Te3 pseudobinary tie-line and an important component of heterogeneously structured phase-change materials. Some key growth parameters are introduced for the fabrication of highly oriented films. The optimization of the sputtering conditions enables the growth of highly oriented films on a variety of substrates even on flexible surfaces. Furthermore, the same techniques are found to be applicable for the deposition of similar materials including Ge-Sb-Te, Bi–Te, Bi2Te3–Sb2Te3, and Bi–Sb alloys. In order to meet the increasing demand for nonvolatile memory as well as other novel electronic devices, the fabrication of high-quality thin films by an industry friendly method is crucial.
AB - This paper reviews recent developments in the sputter growth of chalcogenide thin films for phase-change memory applications. We focus primarily on the growth of highly oriented Sb2Te3, which is a layered material. Sb2Te3 is an end point compound of the GeTe–Sb2Te3 pseudobinary tie-line and an important component of heterogeneously structured phase-change materials. Some key growth parameters are introduced for the fabrication of highly oriented films. The optimization of the sputtering conditions enables the growth of highly oriented films on a variety of substrates even on flexible surfaces. Furthermore, the same techniques are found to be applicable for the deposition of similar materials including Ge-Sb-Te, Bi–Te, Bi2Te3–Sb2Te3, and Bi–Sb alloys. In order to meet the increasing demand for nonvolatile memory as well as other novel electronic devices, the fabrication of high-quality thin films by an industry friendly method is crucial.
KW - Chalcogenides
KW - Highly oriented films
KW - Non-volatile memory
KW - Phase-change materials
KW - SbTe
KW - Sputtering
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U2 - 10.1016/j.mssp.2021.106079
DO - 10.1016/j.mssp.2021.106079
M3 - Review article
AN - SCOPUS:85110577915
SN - 1369-8001
VL - 135
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 106079
ER -