Recrystallization behaviour and electrical properties of germanium ion implanted polycrystalline silicon films

Myeon Koo Kang, Takuro Yamaguchi, Hiroshi Kuwano

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The recrystallization behaviour of undoped and phosphorus-doped polycrystalline silicon films amorphized by germanium ion implantation at doses ranging from 1 × 1015 to 1 × 1016 cm-2 are investigated, and the electrical properties of phosphorus-doped films after recrystallization are studied. The phosphorus doping concentration ranges from 3 × 1018 to 1 × 1020 cm-3. It is found that the nucleation rate decreases for undoped films and increases for phosphorus-doped films with increasing germanium dose; the growth rates decrease for both doped and undoped films. The decrease in nucleation rate is caused by the increase in implantation damage. The decrease in growth rate is considered to be due to the increase in lattice strain. The grain size increases with germanium dose for undoped films, but decreases for phosphorus-doped films. The dependence of the electrical properties of the recrystallized films as a function of phosphorus doping concentration with different germanium doses can be explained in terms of the grain size, crystallinity and grain boundary barrier height.

Original languageEnglish
Pages (from-to)451-454
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume7
Issue number6
DOIs
Publication statusPublished - 1996 Jan 1

Fingerprint

Germanium
silicon films
Polysilicon
germanium
Electric properties
phosphorus
electrical properties
Ions
Phosphorus
ions
dosage
grain size
nucleation
Nucleation
Doping (additives)
ion implantation
crystallinity
implantation
Ion implantation
grain boundaries

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Recrystallization behaviour and electrical properties of germanium ion implanted polycrystalline silicon films. / Kang, Myeon Koo; Yamaguchi, Takuro; Kuwano, Hiroshi.

In: Journal of Materials Science: Materials in Electronics, Vol. 7, No. 6, 01.01.1996, p. 451-454.

Research output: Contribution to journalArticle

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