Recystallization characteristics of polycrystalline silicon films amorphized by germanium ion implantation

Myeon Koo Kang, Kenichi Akashi, Takuro Yamaguchi, Hiroshi Kuwano

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The recrystallization characteristics of polycrystalline silicon (poly-Si) films amorphized by germanium ion (Ge+) implantation on a SiO2 layer are studied by TEM analysis, and the possibility of enlarging the final grain size is investigated. Also, the characteristics of Ge+ implanted films with phosphorus doping are reported and discussed. The nucleation and growth rates of undoped Ge+ implanted films are lower and higher, respectively, than those of silicon ion (Si+) implanted films, so that the former films achieve grain sizes about 2-3 times larger than the latter films, depending on annealing temperature. Phosphorus doping in Ge+ implanted films effectively enhances the grain size, because of the retardation of random nucleation and the enhancement of grain growth. An average grain size of 12 μm is obtained in doped Ge+ implanted films with a phosphorus concentration of 1 × 1020 ions/cm3 after annealing at 650°C for 5 h, which is about four times larger than that in undoped Ge+ implanted films.

Original languageEnglish
Pages (from-to)383-387
Number of pages5
JournalSolid State Electronics
Volume38
Issue number2
DOIs
Publication statusPublished - 1995 Jan 1

Fingerprint

Germanium
silicon films
Polysilicon
Ion implantation
ion implantation
germanium
grain size
phosphorus
Phosphorus
Ions
nucleation
Nucleation
Doping (additives)
Annealing
annealing
Silicon
Grain growth
ions
transmission electron microscopy
Transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Recystallization characteristics of polycrystalline silicon films amorphized by germanium ion implantation. / Kang, Myeon Koo; Akashi, Kenichi; Yamaguchi, Takuro; Kuwano, Hiroshi.

In: Solid State Electronics, Vol. 38, No. 2, 01.01.1995, p. 383-387.

Research output: Contribution to journalArticle

@article{11a219e80dfe4f69af61b9b6fe929302,
title = "Recystallization characteristics of polycrystalline silicon films amorphized by germanium ion implantation",
abstract = "The recrystallization characteristics of polycrystalline silicon (poly-Si) films amorphized by germanium ion (Ge+) implantation on a SiO2 layer are studied by TEM analysis, and the possibility of enlarging the final grain size is investigated. Also, the characteristics of Ge+ implanted films with phosphorus doping are reported and discussed. The nucleation and growth rates of undoped Ge+ implanted films are lower and higher, respectively, than those of silicon ion (Si+) implanted films, so that the former films achieve grain sizes about 2-3 times larger than the latter films, depending on annealing temperature. Phosphorus doping in Ge+ implanted films effectively enhances the grain size, because of the retardation of random nucleation and the enhancement of grain growth. An average grain size of 12 μm is obtained in doped Ge+ implanted films with a phosphorus concentration of 1 × 1020 ions/cm3 after annealing at 650°C for 5 h, which is about four times larger than that in undoped Ge+ implanted films.",
author = "Kang, {Myeon Koo} and Kenichi Akashi and Takuro Yamaguchi and Hiroshi Kuwano",
year = "1995",
month = "1",
day = "1",
doi = "10.1016/0038-1101(94)00112-S",
language = "English",
volume = "38",
pages = "383--387",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "2",

}

TY - JOUR

T1 - Recystallization characteristics of polycrystalline silicon films amorphized by germanium ion implantation

AU - Kang, Myeon Koo

AU - Akashi, Kenichi

AU - Yamaguchi, Takuro

AU - Kuwano, Hiroshi

PY - 1995/1/1

Y1 - 1995/1/1

N2 - The recrystallization characteristics of polycrystalline silicon (poly-Si) films amorphized by germanium ion (Ge+) implantation on a SiO2 layer are studied by TEM analysis, and the possibility of enlarging the final grain size is investigated. Also, the characteristics of Ge+ implanted films with phosphorus doping are reported and discussed. The nucleation and growth rates of undoped Ge+ implanted films are lower and higher, respectively, than those of silicon ion (Si+) implanted films, so that the former films achieve grain sizes about 2-3 times larger than the latter films, depending on annealing temperature. Phosphorus doping in Ge+ implanted films effectively enhances the grain size, because of the retardation of random nucleation and the enhancement of grain growth. An average grain size of 12 μm is obtained in doped Ge+ implanted films with a phosphorus concentration of 1 × 1020 ions/cm3 after annealing at 650°C for 5 h, which is about four times larger than that in undoped Ge+ implanted films.

AB - The recrystallization characteristics of polycrystalline silicon (poly-Si) films amorphized by germanium ion (Ge+) implantation on a SiO2 layer are studied by TEM analysis, and the possibility of enlarging the final grain size is investigated. Also, the characteristics of Ge+ implanted films with phosphorus doping are reported and discussed. The nucleation and growth rates of undoped Ge+ implanted films are lower and higher, respectively, than those of silicon ion (Si+) implanted films, so that the former films achieve grain sizes about 2-3 times larger than the latter films, depending on annealing temperature. Phosphorus doping in Ge+ implanted films effectively enhances the grain size, because of the retardation of random nucleation and the enhancement of grain growth. An average grain size of 12 μm is obtained in doped Ge+ implanted films with a phosphorus concentration of 1 × 1020 ions/cm3 after annealing at 650°C for 5 h, which is about four times larger than that in undoped Ge+ implanted films.

UR - http://www.scopus.com/inward/record.url?scp=0029246919&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029246919&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(94)00112-S

DO - 10.1016/0038-1101(94)00112-S

M3 - Article

AN - SCOPUS:0029246919

VL - 38

SP - 383

EP - 387

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 2

ER -