Redshifted and blueshifted photoluminescence emission of InAs/InP quantum dots upon amorphization of phase change material

Nurrul Syafawati Binti Humam, Yu Sato, Motoki Takahashi, Shohei Kanazawa, Nobuhiro Tsumori, Philippe Regreny, Michel Gendry, Toshiharu Saiki

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    3 Citations (Scopus)

    Abstract

    We present the mechanisms underlying the redshifted and blueshifted photoluminescence (PL) of quantum dots (QDs) upon amorphization of phase change material (PCM). We calculated the stress and energy shift distribution induced by volume expansion using finite element method. Simulation result reveals that redshift is obtained beneath the flat part of amorphous mark, while blueshift is obtained beneath the edge region of amorphous mark. Simulation result is accompanied by two experimental studies; two-dimensional PL intensity mapping of InAs/InP QD sample deposited by a layer of PCM, and an analysis on the relationship between PL intensity ratio and energy shift were performed.

    Original languageEnglish
    Pages (from-to)14830-14839
    Number of pages10
    JournalOptics Express
    Volume22
    Issue number12
    DOIs
    Publication statusPublished - 2014 Jun 16

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    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics

    Cite this

    Humam, N. S. B., Sato, Y., Takahashi, M., Kanazawa, S., Tsumori, N., Regreny, P., Gendry, M., & Saiki, T. (2014). Redshifted and blueshifted photoluminescence emission of InAs/InP quantum dots upon amorphization of phase change material. Optics Express, 22(12), 14830-14839. https://doi.org/10.1364/OE.22.014830