Relation between vapor Cs and adsorbed Cs in H- ion source

M. Ogasawara; T. Morishita; A. Hatayama

doi:10.1063/1.1150319

Relation between vapor Cs and adsorbed Cs in H^- ion source

M. Ogasawara, T. Morishita, A. Hatayama

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Conference article › peer-review

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Abstract

The relation between gaseous Cs density and the coverage of Cs on the plasma grid surface is determined in the existence of the effect of Cs deposit on the cold surface. An equation for the deposit of Cs on the cold surface in the ion source is obtained by considering the saturation of the deposit. The Cs coverage is expressed as a function of gaseous Cs density in the volume of the ion source by considering the relation τ_θ ≪ τ_a, where τ_θ is the time scale of the Cs adsorption to the plasma grid surface and τ_a is that of the Cs adsorption to the cold surface. The coverage varies with the slow time scale through the variation of the gaseous density related to the deposit of Cs on the cold surface.

Original language	English
Pages (from-to)	877-879
Number of pages	3
Journal	Review of Scientific Instruments
Volume	71
Issue number	2 II
DOIs	https://doi.org/10.1063/1.1150319
Publication status	Published - 2000 Feb
Event	The 8th International Conference on Ion Sources (ICIS '99) - Kyoto, Japan Duration: 1999 Sept 6 → 1999 Sept 10

ASJC Scopus subject areas

Instrumentation

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10.1063/1.1150319

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title = "Relation between vapor Cs and adsorbed Cs in H- ion source",

abstract = "The relation between gaseous Cs density and the coverage of Cs on the plasma grid surface is determined in the existence of the effect of Cs deposit on the cold surface. An equation for the deposit of Cs on the cold surface in the ion source is obtained by considering the saturation of the deposit. The Cs coverage is expressed as a function of gaseous Cs density in the volume of the ion source by considering the relation τθ ≪ τa, where τθ is the time scale of the Cs adsorption to the plasma grid surface and τa is that of the Cs adsorption to the cold surface. The coverage varies with the slow time scale through the variation of the gaseous density related to the deposit of Cs on the cold surface.",

author = "M. Ogasawara and T. Morishita and A. Hatayama",

year = "2000",

month = feb,

doi = "10.1063/1.1150319",

language = "English",

volume = "71",

pages = "877--879",

journal = "Review of Scientific Instruments",

issn = "0034-6748",

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number = "2 II",

note = "The 8th International Conference on Ion Sources (ICIS '99) ; Conference date: 06-09-1999 Through 10-09-1999",

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TY - JOUR

T1 - Relation between vapor Cs and adsorbed Cs in H- ion source

AU - Ogasawara, M.

AU - Morishita, T.

AU - Hatayama, A.

PY - 2000/2

Y1 - 2000/2

N2 - The relation between gaseous Cs density and the coverage of Cs on the plasma grid surface is determined in the existence of the effect of Cs deposit on the cold surface. An equation for the deposit of Cs on the cold surface in the ion source is obtained by considering the saturation of the deposit. The Cs coverage is expressed as a function of gaseous Cs density in the volume of the ion source by considering the relation τθ ≪ τa, where τθ is the time scale of the Cs adsorption to the plasma grid surface and τa is that of the Cs adsorption to the cold surface. The coverage varies with the slow time scale through the variation of the gaseous density related to the deposit of Cs on the cold surface.

AB - The relation between gaseous Cs density and the coverage of Cs on the plasma grid surface is determined in the existence of the effect of Cs deposit on the cold surface. An equation for the deposit of Cs on the cold surface in the ion source is obtained by considering the saturation of the deposit. The Cs coverage is expressed as a function of gaseous Cs density in the volume of the ion source by considering the relation τθ ≪ τa, where τθ is the time scale of the Cs adsorption to the plasma grid surface and τa is that of the Cs adsorption to the cold surface. The coverage varies with the slow time scale through the variation of the gaseous density related to the deposit of Cs on the cold surface.

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DO - 10.1063/1.1150319

M3 - Conference article

AN - SCOPUS:0003800299

SN - 0034-6748

VL - 71

SP - 877

EP - 879

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

IS - 2 II

T2 - The 8th International Conference on Ion Sources (ICIS '99)

Y2 - 6 September 1999 through 10 September 1999

ER -

Relation between vapor Cs and adsorbed Cs in H^- ion source

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