Relation between vapor Cs and adsorbed Cs in H- ion source

M. Ogasawara, T. Morishita, A. Hatayama

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The relation between gaseous Cs density and the coverage of Cs on the plasma grid surface is determined in the existence of the effect of Cs deposit on the cold surface. An equation for the deposit of Cs on the cold surface in the ion source is obtained by considering the saturation of the deposit. The Cs coverage is expressed as a function of gaseous Cs density in the volume of the ion source by considering the relation τθ ≪ τa, where τθ is the time scale of the Cs adsorption to the plasma grid surface and τa is that of the Cs adsorption to the cold surface. The coverage varies with the slow time scale through the variation of the gaseous density related to the deposit of Cs on the cold surface.

Original languageEnglish
Pages (from-to)877-879
Number of pages3
JournalReview of Scientific Instruments
Volume71
Issue number2 II
Publication statusPublished - 2000 Feb 1

    Fingerprint

ASJC Scopus subject areas

  • Instrumentation

Cite this

Ogasawara, M., Morishita, T., & Hatayama, A. (2000). Relation between vapor Cs and adsorbed Cs in H- ion source. Review of Scientific Instruments, 71(2 II), 877-879.