Reply to Comment on 'Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions

R. Kube, H. Bracht, E. Hüger, H. Schmidt, J. Lundsgaard Hansen, A. Nylandsted Larsen, J. W. Ager, E. E. Haller, T. Geue, J. Stahn, M. Uematsu, Kohei M Itoh

Research output: Contribution to journalArticle

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Abstract

Suezawa et al. [Phys. Rev. B 90, 117201 (2014)PRBMDO1098-012110.1103/PhysRevB.90.117201] claim in their Comment that the data reported by Shimizu et al. [Phys. Rev. Lett. 98, 095901 (2007)PRLTAO0031-900710.1103/PhysRevLett.98.095901] and Kube et al. [Phys. Rev. B 88, 085206 (2013)PRBMDO1098-012110.1103/PhysRevB.88.085206] on silicon self-diffusion for temperatures between 900 and 735°C are affected by carbon and vacancy clusters and, accordingly, do not reflect self-diffusion under thermal equilibrium conditions. We demonstrate in our Reply that an impact of carbon on self-diffusion can definitely be excluded. In addition it is rather unlikely that the self-diffusion data reported by Shimizu et al. [Phys. Rev. Lett. 98, 095901 (2007)PRLTAO0031-900710.1103/PhysRevLett.98.095901] and Kube et al. [Phys. Rev. B 88, 085206 (2013)PRBMDO1098-012110.1103/PhysRevB.88.085206] are affected by the dissolution of vacancy clusters since strong differences exist not only in the preparation of the samples used for the experiments, but also in the time of diffusion. Finally, the vacancy formation enthalpy deduced by Suezawa et al. [J. Appl. Phys. 110, 083531 (2011)JAPIAU0021-897910.1063/1.3653291] from quenching experiments is consistent with the value obtained from the temperature dependence of the vacancy formation enthalpy reported by Kube et al. [Phys. Rev. B 88, 085206 (2013)PRBMDO1098-012110.1103/PhysRevB.88.085206]. Overall we conclude that the quenching experiments of Suezawa et al. [J. Appl. Phys. 110, 083531 (2011)JAPIAU0021-897910.1063/1.3653291] cannot disprove the interpretation of the low-temperature self-diffusion data reported by Shimizu et al. [Phys. Rev. Lett. 98, 095901 (2007)PRLTAO0031-900710.1103/PhysRevLett.98.095901] and Kube et al. [Phys. Rev. B 88, 085206 (2013)PRBMDO1098-012110.1103/PhysRevB.88.085206].

Original languageEnglish
Article number117202
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume90
Issue number11
DOIs
Publication statusPublished - 2014 Sep 24

Fingerprint

nonequilibrium conditions
Silicon
Vacancies
interstitials
silicon
enthalpy
quenching
Enthalpy
Quenching
Carbon
carbon
Experiments
dissolving
Temperature
Hot Temperature
Dissolution
temperature dependence
preparation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Reply to Comment on 'Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions. / Kube, R.; Bracht, H.; Hüger, E.; Schmidt, H.; Hansen, J. Lundsgaard; Larsen, A. Nylandsted; Ager, J. W.; Haller, E. E.; Geue, T.; Stahn, J.; Uematsu, M.; Itoh, Kohei M.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 90, No. 11, 117202, 24.09.2014.

Research output: Contribution to journalArticle

Kube, R. ; Bracht, H. ; Hüger, E. ; Schmidt, H. ; Hansen, J. Lundsgaard ; Larsen, A. Nylandsted ; Ager, J. W. ; Haller, E. E. ; Geue, T. ; Stahn, J. ; Uematsu, M. ; Itoh, Kohei M. / Reply to Comment on 'Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions. In: Physical Review B - Condensed Matter and Materials Physics. 2014 ; Vol. 90, No. 11.
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abstract = "Suezawa et al. [Phys. Rev. B 90, 117201 (2014)PRBMDO1098-012110.1103/PhysRevB.90.117201] claim in their Comment that the data reported by Shimizu et al. [Phys. Rev. Lett. 98, 095901 (2007)PRLTAO0031-900710.1103/PhysRevLett.98.095901] and Kube et al. [Phys. Rev. B 88, 085206 (2013)PRBMDO1098-012110.1103/PhysRevB.88.085206] on silicon self-diffusion for temperatures between 900 and 735°C are affected by carbon and vacancy clusters and, accordingly, do not reflect self-diffusion under thermal equilibrium conditions. We demonstrate in our Reply that an impact of carbon on self-diffusion can definitely be excluded. In addition it is rather unlikely that the self-diffusion data reported by Shimizu et al. [Phys. Rev. Lett. 98, 095901 (2007)PRLTAO0031-900710.1103/PhysRevLett.98.095901] and Kube et al. [Phys. Rev. B 88, 085206 (2013)PRBMDO1098-012110.1103/PhysRevB.88.085206] are affected by the dissolution of vacancy clusters since strong differences exist not only in the preparation of the samples used for the experiments, but also in the time of diffusion. Finally, the vacancy formation enthalpy deduced by Suezawa et al. [J. Appl. Phys. 110, 083531 (2011)JAPIAU0021-897910.1063/1.3653291] from quenching experiments is consistent with the value obtained from the temperature dependence of the vacancy formation enthalpy reported by Kube et al. [Phys. Rev. B 88, 085206 (2013)PRBMDO1098-012110.1103/PhysRevB.88.085206]. Overall we conclude that the quenching experiments of Suezawa et al. [J. Appl. Phys. 110, 083531 (2011)JAPIAU0021-897910.1063/1.3653291] cannot disprove the interpretation of the low-temperature self-diffusion data reported by Shimizu et al. [Phys. Rev. Lett. 98, 095901 (2007)PRLTAO0031-900710.1103/PhysRevLett.98.095901] and Kube et al. [Phys. Rev. B 88, 085206 (2013)PRBMDO1098-012110.1103/PhysRevB.88.085206].",
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T1 - Reply to Comment on 'Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions

AU - Kube, R.

AU - Bracht, H.

AU - Hüger, E.

AU - Schmidt, H.

AU - Hansen, J. Lundsgaard

AU - Larsen, A. Nylandsted

AU - Ager, J. W.

AU - Haller, E. E.

AU - Geue, T.

AU - Stahn, J.

AU - Uematsu, M.

AU - Itoh, Kohei M

PY - 2014/9/24

Y1 - 2014/9/24

N2 - Suezawa et al. [Phys. Rev. B 90, 117201 (2014)PRBMDO1098-012110.1103/PhysRevB.90.117201] claim in their Comment that the data reported by Shimizu et al. [Phys. Rev. Lett. 98, 095901 (2007)PRLTAO0031-900710.1103/PhysRevLett.98.095901] and Kube et al. [Phys. Rev. B 88, 085206 (2013)PRBMDO1098-012110.1103/PhysRevB.88.085206] on silicon self-diffusion for temperatures between 900 and 735°C are affected by carbon and vacancy clusters and, accordingly, do not reflect self-diffusion under thermal equilibrium conditions. We demonstrate in our Reply that an impact of carbon on self-diffusion can definitely be excluded. In addition it is rather unlikely that the self-diffusion data reported by Shimizu et al. [Phys. Rev. Lett. 98, 095901 (2007)PRLTAO0031-900710.1103/PhysRevLett.98.095901] and Kube et al. [Phys. Rev. B 88, 085206 (2013)PRBMDO1098-012110.1103/PhysRevB.88.085206] are affected by the dissolution of vacancy clusters since strong differences exist not only in the preparation of the samples used for the experiments, but also in the time of diffusion. Finally, the vacancy formation enthalpy deduced by Suezawa et al. [J. Appl. Phys. 110, 083531 (2011)JAPIAU0021-897910.1063/1.3653291] from quenching experiments is consistent with the value obtained from the temperature dependence of the vacancy formation enthalpy reported by Kube et al. [Phys. Rev. B 88, 085206 (2013)PRBMDO1098-012110.1103/PhysRevB.88.085206]. Overall we conclude that the quenching experiments of Suezawa et al. [J. Appl. Phys. 110, 083531 (2011)JAPIAU0021-897910.1063/1.3653291] cannot disprove the interpretation of the low-temperature self-diffusion data reported by Shimizu et al. [Phys. Rev. Lett. 98, 095901 (2007)PRLTAO0031-900710.1103/PhysRevLett.98.095901] and Kube et al. [Phys. Rev. B 88, 085206 (2013)PRBMDO1098-012110.1103/PhysRevB.88.085206].

AB - Suezawa et al. [Phys. Rev. B 90, 117201 (2014)PRBMDO1098-012110.1103/PhysRevB.90.117201] claim in their Comment that the data reported by Shimizu et al. [Phys. Rev. Lett. 98, 095901 (2007)PRLTAO0031-900710.1103/PhysRevLett.98.095901] and Kube et al. [Phys. Rev. B 88, 085206 (2013)PRBMDO1098-012110.1103/PhysRevB.88.085206] on silicon self-diffusion for temperatures between 900 and 735°C are affected by carbon and vacancy clusters and, accordingly, do not reflect self-diffusion under thermal equilibrium conditions. We demonstrate in our Reply that an impact of carbon on self-diffusion can definitely be excluded. In addition it is rather unlikely that the self-diffusion data reported by Shimizu et al. [Phys. Rev. Lett. 98, 095901 (2007)PRLTAO0031-900710.1103/PhysRevLett.98.095901] and Kube et al. [Phys. Rev. B 88, 085206 (2013)PRBMDO1098-012110.1103/PhysRevB.88.085206] are affected by the dissolution of vacancy clusters since strong differences exist not only in the preparation of the samples used for the experiments, but also in the time of diffusion. Finally, the vacancy formation enthalpy deduced by Suezawa et al. [J. Appl. Phys. 110, 083531 (2011)JAPIAU0021-897910.1063/1.3653291] from quenching experiments is consistent with the value obtained from the temperature dependence of the vacancy formation enthalpy reported by Kube et al. [Phys. Rev. B 88, 085206 (2013)PRBMDO1098-012110.1103/PhysRevB.88.085206]. Overall we conclude that the quenching experiments of Suezawa et al. [J. Appl. Phys. 110, 083531 (2011)JAPIAU0021-897910.1063/1.3653291] cannot disprove the interpretation of the low-temperature self-diffusion data reported by Shimizu et al. [Phys. Rev. Lett. 98, 095901 (2007)PRLTAO0031-900710.1103/PhysRevLett.98.095901] and Kube et al. [Phys. Rev. B 88, 085206 (2013)PRBMDO1098-012110.1103/PhysRevB.88.085206].

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