Resistive switching characteristics of interfacial phase-change memory at elevated temperature

Kirill V. Mitrofanov, Yuta Saito, Noriyuki Miyata, Paul Fons, Alexander V. Kolobov, Junji Tominaga

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Interfacial phase-change memory (iPCM) devices were fabricated using W and TiN for the bottom and top contacts, respectively, and the effect of operation temperature on the resistive switching was examined over the range between room temperature and 200 °C. It was found that the highresistance (RESET) state in an iPCM device drops sharply at around 150°C to a low-resistance (SET) state, which differs by ∼400Ω from the SET state obtained by electric-field-induced switching. The iPCM device SET state resistance recovered during the cooling process and remained at nearly the same value for the RESET state. These resistance characteristics greatly differ from those of the conventional Ge-Sb-Te (GST) alloy phase-change memory device, underscoring the fundamentally different switching nature of iPCM devices. From the thermal stability measurements of iPCM devices, their optimal temperature operation was concluded to be less than 100 °C.

Original languageEnglish
Article number04FE06
JournalJapanese journal of applied physics
Volume57
Issue number4
DOIs
Publication statusPublished - 2018 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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