Response of machining-damaged single-crystalline silicon wafers to nanosecond pulsed laser irradiation

Jiwang Yan, Tooru Asami, Tsunemoto Kuriyagawa

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Ultraprecision diamond-machined silicon wafers have been irradiated by a nanosecond pulsed Nd:YAG laser. The results indicate that at specific laser energy intensity levels, the machining-induced subsurface damage layer of silicon has been reconstructed to a perfect single-crystalline structure identical to the bulk. Laser irradiation causes two effects on silicon: one is the epitaxial regrowth of the near-surface amorphous layer, and the other is the complete removal of the dislocations from the crystalline layer. It is the dislocation-free crystalline region that serves as the seed layer to recrystallize the amorphous layer, enabling excellent crystalline perfection. These findings may offer practical alternatives to current chemo-mechanical processing methods for silicon wafers.

Original languageEnglish
Article number016
Pages (from-to)392-395
Number of pages4
JournalSemiconductor Science and Technology
Volume22
Issue number4
DOIs
Publication statusPublished - 2007 Apr 1
Externally publishedYes

Fingerprint

Laser beam effects
Pulsed lasers
Silicon wafers
machining
pulsed lasers
Machining
wafers
Crystalline materials
irradiation
silicon
Silicon
Dislocations (crystals)
Diamond
Lasers
Seed
Diamonds
lasers
YAG lasers
seeds
diamonds

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Response of machining-damaged single-crystalline silicon wafers to nanosecond pulsed laser irradiation. / Yan, Jiwang; Asami, Tooru; Kuriyagawa, Tsunemoto.

In: Semiconductor Science and Technology, Vol. 22, No. 4, 016, 01.04.2007, p. 392-395.

Research output: Contribution to journalArticle

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