Response of machining-damaged single-crystalline silicon wafers to nanosecond pulsed laser irradiation

Jiwang Yan, Tooru Asami, Tsunemoto Kuriyagawa

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Ultraprecision diamond-machined silicon wafers have been irradiated by a nanosecond pulsed Nd:YAG laser. The results indicate that at specific laser energy intensity levels, the machining-induced subsurface damage layer of silicon has been reconstructed to a perfect single-crystalline structure identical to the bulk. Laser irradiation causes two effects on silicon: one is the epitaxial regrowth of the near-surface amorphous layer, and the other is the complete removal of the dislocations from the crystalline layer. It is the dislocation-free crystalline region that serves as the seed layer to recrystallize the amorphous layer, enabling excellent crystalline perfection. These findings may offer practical alternatives to current chemo-mechanical processing methods for silicon wafers.

Original languageEnglish
Article number016
Pages (from-to)392-395
Number of pages4
JournalSemiconductor Science and Technology
Volume22
Issue number4
DOIs
Publication statusPublished - 2007 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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