Reversible optical gate switching in Si wire waveguide integrated with Ge2Sb2Te5 thin film

Y. Ikuma, Y. Shoji, M. Kuwahara, X. Wang, K. Kintaka, H. Kawashima, D. Tanaka, H. Tsuda

    Research output: Contribution to journalArticle

    24 Citations (Scopus)

    Abstract

    Reversible switching of an optical gate switch in a Si waveguide including a thin Ge2Sb2Te5 phase-change material layer is reported. The phase-change was triggered by 660nm laser pulse irradiation onto the Ge2Sb2Te5 layer with no structural damage. The switching time from the initial amorphous state to the crystalline state was 240ns, and that from the crystalline state to the amorphous state was 110ns. The maximum extinction ratios for switching-off and switching-on over the wavelength range from 1525 to 1600nm were 5.7 and 2.5dB, respectively.

    Original languageEnglish
    Pages (from-to)1460-1462
    Number of pages3
    JournalElectronics Letters
    Volume46
    Issue number21
    DOIs
    Publication statusPublished - 2010 Oct 14

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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    Ikuma, Y., Shoji, Y., Kuwahara, M., Wang, X., Kintaka, K., Kawashima, H., Tanaka, D., & Tsuda, H. (2010). Reversible optical gate switching in Si wire waveguide integrated with Ge2Sb2Te5 thin film. Electronics Letters, 46(21), 1460-1462. https://doi.org/10.1049/el.2010.2538