Reversible switching of an optical gate based on Si rib waveguides with a Ge2Sb2Te5 thin film

D. Tanaka, Y. Ikuma, T. Toyosaki, H. Tsuda, Y. Shoji, K. Kintaka, H. Kawashima, M. Kuwahara, X. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Reversible switching of an optical gate based on Si rib waveguides with a Ge2Sb2Te5 thin film is reported. We demonstrated four cycles of switching by pulsed laser irradiation. The average extinction ratios of each switching event were 9.1, 10.7, 11.6 and 11.7 dB, respectively. The extinction ratio of this optical gate was more than 5.9 dB over the wide wavelength range from 1525 nm to 1600 nm.

Original languageEnglish
Title of host publicationProceedings of 2011 1st International Symposium on Access Spaces, ISAS 2011
Pages147-149
Number of pages3
DOIs
Publication statusPublished - 2011
Event2011 1st International Symposium on Access Spaces, ISAS 2011 - Yokohama, Japan
Duration: 2011 Jun 172011 Jun 19

Publication series

NameProceedings of 2011 1st International Symposium on Access Spaces, ISAS 2011

Other

Other2011 1st International Symposium on Access Spaces, ISAS 2011
Country/TerritoryJapan
CityYokohama
Period11/6/1711/6/19

Keywords

  • optical switch
  • phase change material
  • rib waveguide
  • silicon on insulator

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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