Reversible switching of an optical gate based on Si rib waveguides with a Ge2Sb2Te5 thin film

D. Tanaka, Y. Ikuma, T. Toyosaki, H. Tsuda, Y. Shoji, K. Kintaka, H. Kawashima, M. Kuwahara, X. Wang

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Reversible switching of an optical gate based on Si rib waveguides with a Ge2Sb2Te5 thin film is reported. We demonstrated four cycles of switching by pulsed laser irradiation. The average extinction ratios of each switching event were 9.1, 10.7, 11.6 and 11.7 dB, respectively. The extinction ratio of this optical gate was more than 5.9 dB over the wide wavelength range from 1525 nm to 1600 nm.

    Original languageEnglish
    Title of host publicationProceedings of 2011 1st International Symposium on Access Spaces, ISAS 2011
    Pages147-149
    Number of pages3
    DOIs
    Publication statusPublished - 2011 Aug 23
    Event2011 1st International Symposium on Access Spaces, ISAS 2011 - Yokohama, Japan
    Duration: 2011 Jun 172011 Jun 19

    Publication series

    NameProceedings of 2011 1st International Symposium on Access Spaces, ISAS 2011

    Other

    Other2011 1st International Symposium on Access Spaces, ISAS 2011
    CountryJapan
    CityYokohama
    Period11/6/1711/6/19

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    Keywords

    • optical switch
    • phase change material
    • rib waveguide
    • silicon on insulator

    ASJC Scopus subject areas

    • Computer Networks and Communications
    • Electrical and Electronic Engineering

    Cite this

    Tanaka, D., Ikuma, Y., Toyosaki, T., Tsuda, H., Shoji, Y., Kintaka, K., Kawashima, H., Kuwahara, M., & Wang, X. (2011). Reversible switching of an optical gate based on Si rib waveguides with a Ge2Sb2Te5 thin film. In Proceedings of 2011 1st International Symposium on Access Spaces, ISAS 2011 (pp. 147-149). [5960937] (Proceedings of 2011 1st International Symposium on Access Spaces, ISAS 2011). https://doi.org/10.1109/ISAS.2011.5960937