RF magneto-impedance effect of spin tunneling junctions

H. Kaiju; N. Hirabayashi; T. Morozumi; S. Fujita; K. Shiiki

RF magneto-impedance effect of spin tunneling junctions

H. Kaiju, N. Hirabayashi, T. Morozumi, S. Fujita, K. Shiiki

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effect of the spin tunneling junctions on the RF magneto-impedance was discussed. The real part of impedance showed a maximum value at around 25 Oe of magnetic field at each frequency. The change to the real part of the impedance corresponded to the dc TMR effect.

Original language	English
Pages (from-to)	ES02
Journal	Digests of the Intermag Conference
Publication status	Published - 2003 Oct 1
Event	Intermag 2003: International Magnetics Conference - Boston, MA, United States Duration: 2003 Mar 28 → 2003 Apr 3

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@article{69abcb675e524d2ebf50930f6cdd906a,

title = "RF magneto-impedance effect of spin tunneling junctions",

abstract = "The effect of the spin tunneling junctions on the RF magneto-impedance was discussed. The real part of impedance showed a maximum value at around 25 Oe of magnetic field at each frequency. The change to the real part of the impedance corresponded to the dc TMR effect.",

author = "H. Kaiju and N. Hirabayashi and T. Morozumi and S. Fujita and K. Shiiki",

year = "2003",

month = oct,

day = "1",

language = "English",

pages = "ES02",

journal = "Digests of the Intermag Conference",

issn = "0074-6843",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Intermag 2003: International Magnetics Conference ; Conference date: 28-03-2003 Through 03-04-2003",

}

TY - JOUR

T1 - RF magneto-impedance effect of spin tunneling junctions

AU - Kaiju, H.

AU - Hirabayashi, N.

AU - Morozumi, T.

AU - Fujita, S.

AU - Shiiki, K.

PY - 2003/10/1

Y1 - 2003/10/1

N2 - The effect of the spin tunneling junctions on the RF magneto-impedance was discussed. The real part of impedance showed a maximum value at around 25 Oe of magnetic field at each frequency. The change to the real part of the impedance corresponded to the dc TMR effect.

AB - The effect of the spin tunneling junctions on the RF magneto-impedance was discussed. The real part of impedance showed a maximum value at around 25 Oe of magnetic field at each frequency. The change to the real part of the impedance corresponded to the dc TMR effect.

UR - http://www.scopus.com/inward/record.url?scp=18844475985&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18844475985&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:18844475985

SN - 0074-6843

SP - ES02

JO - Digests of the Intermag Conference

JF - Digests of the Intermag Conference

T2 - Intermag 2003: International Magnetics Conference

Y2 - 28 March 2003 through 3 April 2003

ER -

RF magneto-impedance effect of spin tunneling junctions

Abstract

ASJC Scopus subject areas

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