RF magneto-impedance effect of spin tunneling junctions

H. Kaiju, N. Hirabayashi, T. Morozumi, S. Fujita, K. Shiiki

Research output: Contribution to journalConference article

Abstract

The effect of the spin tunneling junctions on the RF magneto-impedance was discussed. The real part of impedance showed a maximum value at around 25 Oe of magnetic field at each frequency. The change to the real part of the impedance corresponded to the dc TMR effect.

Original languageEnglish
Pages (from-to)ES02
JournalDigests of the Intermag Conference
Publication statusPublished - 2003 Oct 1
EventIntermag 2003: International Magnetics Conference - Boston, MA, United States
Duration: 2003 Mar 282003 Apr 3

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Kaiju, H., Hirabayashi, N., Morozumi, T., Fujita, S., & Shiiki, K. (2003). RF magneto-impedance effect of spin tunneling junctions. Digests of the Intermag Conference, ES02.