Robustness of Voltage-induced Magnetocapacitance

Hideo Kaiju, Takahiro Misawa, Taro Nagahama, Takashi Komine, Osamu Kitakami, Masaya Fujioka, Junji Nishii, Gang Xiao

Research output: Contribution to journalArticle

Abstract

One of the most important achievements in the field of spintronics is the development of magnetic tunnel junctions (MTJs). MTJs exhibit a large tunneling magnetoresistance (TMR). However, TMR is strongly dependent on biasing voltage, generally, decreasing with applying bias. The rapid decay of TMR was a major deficiency of MTJs. Here we report a new phenomenon at room temperature, in which the tunneling magnetocapacitance (TMC) increases with biasing voltage in an MTJ system based on Co 40 Fe 40 B 20 /MgO/Co 40 Fe 40 B 20 . We have observed a maximum TMC value of 102% under appropriate biasing, which is the largest voltage-induced TMC effect ever reported for MTJs. We have found excellent agreement between theory and experiment for the bipolar biasing regions using Debye-Fröhlich model combined with quartic barrier approximation and spin-dependent drift-diffusion model. Based on our calculation, we predict that the voltage-induced TMC ratio could reach 1100% in MTJs with a corresponding TMR value of 604%. Our work has provided a new understanding on the voltage-induced AC spin-dependent transport in MTJs. The results reported here may open a novel pathway for spintronics applications, e.g., non-volatile memories and spin logic circuits.

Original languageEnglish
Article number14709
JournalScientific reports
Volume8
Issue number1
DOIs
Publication statusPublished - 2018 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • General

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    Kaiju, H., Misawa, T., Nagahama, T., Komine, T., Kitakami, O., Fujioka, M., Nishii, J., & Xiao, G. (2018). Robustness of Voltage-induced Magnetocapacitance. Scientific reports, 8(1), [14709]. https://doi.org/10.1038/s41598-018-33065-y