Room temperature Coulomb blockade and low temperature hopping transport in a multiple-dot-channel metal-oxide-semiconductor field-effect-transistor

Toshiro Hiramoto, Hiroki Ishikuro, Tomoyuki Fujii, Gen Hashiguchi, Toshiaki Ikoma

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We have investigated the transport properties of an extremely narrow channel metal-oxide-semiconductor field-effect-transistor (MOSFET) fabricated by a novel anisotropic etching technique. The device shows clear Coulomb blockade oscillations at room temperature, while aperiodic sharp peaks are observed at low temperatures. Measurements of temperature dependence and magnetic field dependence reveal that the narrow channel of the MOSFET is separated into quantum dots and that not only the resonant tunneling transport but also the thermally activated hopping conduction plays an important role at low temperatures.

Original languageEnglish
Pages (from-to)4139-4142
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number6 SUPPL. B
Publication statusPublished - 1997 Jun
Externally publishedYes

    Fingerprint

Keywords

  • Coulomb blockade
  • Coupled quantum dots
  • Hopping conduction
  • MOSFET
  • Resonant tunneling
  • Single electron tunneling

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this